Inventor · disambiguated record
Jindo Byun
Also filed as: BYUN JINDO
18 granted patents·4 pending applications·25 citations·filing 2019–2025
90Inventor score
Files withSAMSUNG ELECTRONICS CO LTD22
Top patents by PatentIndex Score
22 records- 0195US11693030B2Probe device, test device, and test method for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 4, 2023·3 cites·20 claims
- 0294US11587598B2Memory device for generating pulse amplitude modulation-based DQ signal and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 21, 2023·6 cites·19 claims
- 0393US11115021B2Impedance calibration circuit and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 7, 2021·5 cites·20 claims
- 0492US11657860B2Memory package and storage device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
- 0592US11461251B2Memory device supporting a high-efficient input/output interface and a memory system including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 4, 2022·2 cites·20 claims
- 0690US11789879B2Memory device supporting a high-efficient input/output interface and a memory system including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 17, 2023·1 cites·20 claims
- 0789US11669448B2Transmitters for generating multi-level signals and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·8 claims
- 0889US11615833B2Multi-level signal receivers and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 28, 2023·3 cites·20 claims
- 0984US12321290B2Memory device supporting a high-efficient input/output interface and a memory system including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 1083US11804838B2Transmitter circuit including selection circuit, and method of operating the selection circuitSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 31, 2023·1 cites·20 claims
- 1183US2025265206A1Memory device supporting a high-efficient input/output interface and a memory system including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1280US12061561B2Memory device supporting a high-efficient input/output interface and a memory system including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·15 claims
- 1357US12444460B2Memory device, electronic device, and operation method of memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 1457US11914416B2Transmitter circuit and method of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·12 claims
- 1556US11502687B2Impedance calibration circuit and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 15, 2022·0 cites·19 claims
- 1654US2025155911A1Voltage regulatorsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1753US12368443B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 1852US12488816B2Transmitter, memory device and semiconductor device including the transmitterSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 1950US11522261B2Multi-mode transmission line and storage device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 6, 2022·0 cites·20 claims
- 2050US2025166677A1Calibration devices and operating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2149US2024241802A1Quadrature error correction circuit and memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2244US11521672B2Semiconductor device and memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 6, 2022·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →