Inventor · disambiguated record

Jin Cai

Also filed as: CAI JIN · CAI JIN-NAN

35 granted patents·32 pending applications·30 citations·filing 2006–2025

95Inventor score

Technology areasH10D H10P H10W G11C G06F

Files withTAIWAN SEMICONDUCTOR MFG CO LTD61 YANGTZE MEMORY TECH CO LTD4 ZHUHAI SANJIN IND CO LTD2

Top patents by PatentIndex Score

67 records

0198US11145676B1Memory device and multi-level memory cell having ferroelectric storage element and magneto-resistive storage elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·8 cites·18 claims
0292US2025366074A1Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0391US11387360B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
0489US11443803B2Memory device and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·2 cites·20 claims
0589US10707347B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·3 cites·20 claims
0684US2025359266A12D-Channel Transistor Structure with Asymmetric Substrate ContactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0783US12336216B2Ferroelectric semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
0882US2025366115A1Semiconductor devices with superlattice layers in source/drain regions and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0981US2025359166A1Vertical self aligned gate all around transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1080US12170323B2Nano transistors with source/drain having side contacts to 2-D materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
1179US2025349722A1Transistor gate contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1279US2025357317A1Device with gate-to-drain via and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1379US2025344503A1NFET AND PFET WITH DIFFERENT FIN NUMBERS IN FinFET BASED CFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1478US12408387B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
1578US11855221B2Ferroelectric semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
1678US2024379800A1Nano transistors with source/drain having side contacts to 2-d materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1778US2024387657A12D-Channel Transistor Structure with Asymmetric Substrate ContactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1877US2025098222A1Field effect transistor with disabled channels and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1977US2025301716A12d channel with self-aligned source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2077US2025318169A1Manufacturing method of semiconductor device having thin bottom channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2177US2025355584A1Operating methods, memory controllers, and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
2276US2025331269A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2376US2025338580A1Semiconductor devices with superlattice layers in source/drain regions and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2476US2025311410A1Dielectric walls for complementary field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2575US10847221B2Memory device and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·2 cites·20 claims
2675US2024290871A1Forming 3D Transistors Using 2D Van Der WAALS MaterialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2773US12394706B2Device with gate-to-drain via and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
2873US12009411B2Forming 3D transistors using 2D Van Der Waals materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
2973US11862243B2Memory device and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
3073US2025292524A1Semiconductor device having a gate contact on a low-k linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3172US12419103B2Dielectric walls for complementary field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
3272US12191371B2Field effect transistor with disabled channels and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
3372US11189726B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·0 cites·20 claims
3471US12433003B22D-channel transistor structure with asymmetric substrate contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 30, 2025·0 cites·20 claims
3571US12424298B2Control circuit, memory system and control methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
3671US12349421B22D channel with self-aligned source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
3771US11955527B2Nano transistors with source/drain having side contacts to 2-D materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 9, 2024·0 cites·20 claims
3870US12376322B2Semiconductor device having thin bottom channel and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
3969US12349409B2Semiconductor device having a gate contact on a low-k linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
4069US2024250032A1Transistor Gate Contacts and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4169US2023380257A1Fabrication method of a double-gate carbon nanotube transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4268US12405736B2Operating methods, memory controllers, and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
4368US12396235B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
4468US2024194756A1Vertical self aligned gate all around transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4568US2024282772A1NFET and PFET with Different Fin Numbers in FinFET Based CFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4666US11489064B2Forming 3D transistors using 2D van per waals materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·20 claims
4765US11930696B2Fabrication method of a double-gate carbon nanotube transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·0 cites·20 claims
4865US11756645B2Control circuit, memory system and control methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
4965US11522085B2Ferroelectric semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 6, 2022·0 cites·20 claims
5061US2025254919A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites

Showing the top 50 of 67 patent records by PatentIndex Score.

Join the waitlist — get patent alerts

Get an alert when Jin Cai files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →