Inventor · disambiguated record
Jinyong Cai
Also filed as: CAI JINYONG
4 granted patents·8 pending applications·4 citations·filing 2018–2023
61Inventor score
Files withHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD7JIANGSU TASLY DIYI PHARMACEUTICAL CO LTD3SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD2
Top patents by PatentIndex Score
12 records- 0181US11398561B2Method for manufacturing trench MOSFETHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2020·Granted Jul 26, 2022·2 cites·19 claims
- 0265US10686058B2Method for manufacturing trench MOSFETSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2018·Granted Jun 16, 2020·1 cites·17 claims
- 0363US10290715B2Semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2018·Granted May 14, 2019·1 cites·13 claims
- 0457US2025304587A1Wee1 inhibitor, preparation therefor and use thereofJIANGSU TASLY DIYI PHARMACEUTICAL CO LTD·Filed 2023·Application pending·0 cites
- 0556US2025034151A1Wee1 inhibitor, preparation therefor, and use thereofJIANGSU TASLY DIYI PHARMACEUTICAL CO LTD·Filed 2023·Application pending·0 cites
- 0654US2024321964A1Trench semiconductor power device and layout thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Application pending·0 cites
- 0753US12382659B2Method for manufacturing trench MOSFETHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·10 claims
- 0853US2024199619A1Wee1 inhibitor and use thereofJIANGSU TASLY DIYI PHARMACEUTICAL CO LTD·Filed 2022·Application pending·0 cites
- 0950US2023077336A1Method for manufacturing conducting path in doped region, trench-type mosfet device and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Application pending·0 cites
- 1047US2024105843A1Trench field-effect transistor and method for manufacturing trench fetHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Application pending·0 cites
- 1143US2023207685A1Split-gate mosfet and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Application pending·0 cites
- 1242US2023207684A1Split-gate mosfet and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →