Inventor · disambiguated record
Jian-Hao Chen
Also filed as: CHEN JIAN · CHEN JIAN F · CHEN JIAN-HAO
67 granted patents·39 pending applications·168 citations·filing 2005–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD75ALIBABA GROUP HOLDING LTD4UNIV NAT TAIWAN NORMAL4CHEN JIAN3CHEN JIAN-HAO3
Top patents by PatentIndex Score
106 records- 0197US10206094B1Mobile edge platform servers and UE context migration management methods thereofIND TECH RES INST·Filed 2017·Granted Feb 12, 2019·36 cites·20 claims
- 0296US10468500B1FinFET fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·9 cites·20 claims
- 0396US8334198B2Method of fabricating a plurality of gate structuresCHEN JIAN-HAO·Filed 2011·Granted Dec 18, 2012·50 cites·20 claims
- 0494US12255104B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·1 cites·20 claims
- 0594US11894276B2Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 0689US10396156B2Method for FinFET LDD dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 27, 2019·4 cites·20 claims
- 0789US2025357128A1Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0888US8859386B2Semiconductor devices, methods of manufacture thereof, and methods of forming resistorsLU CHIA-YU·Filed 2012·Granted Oct 14, 2014·13 cites·20 claims
- 0987US2025308904A1Methods for doping high-k metal gates for tuning threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1086US12218213B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·1 cites·20 claims
- 1185US8222132B2Fabricating high-K/metal gate devices in a gate last processLEE DA-YUAN·Filed 2009·Granted Jul 17, 2012·12 cites·20 claims
- 1285US2025351539A1Post gate dielectric processing for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1384US12302627B2Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 1484US10991800B2Method for FinFET LDD dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·2 cites·18 claims
- 1584US10761851B2Memory apparatus and method for controlling the sameALIBABA GROUP HOLDING LTD·Filed 2018·Granted Sep 1, 2020·5 cites·39 claims
- 1684US2024379365A1Methods for doping high-k metal gates for tuning threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1784US2024371970A1Finfet fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1883US12317574B2Device providing multiple threshold voltages and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 1983US11605720B2Metal gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·1 cites·20 claims
- 2082US12266575B2Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 1, 2025·0 cites·20 claims
- 2182US11398384B2Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·1 cites·20 claims
- 2282US9111768B2Semiconductor devices, methods of manufacture thereof, and methods of forming resistorsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 18, 2015·5 cites·20 claims
- 2382US2024379364A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2482US2025267920A1Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2582US2025366165A1Metal gates for multi-gate semiconductor devices and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2681US12272557B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 2781US10517020B2Mobile edge platform servers and user equipment context migration management methods thereofIND TECH RES INST·Filed 2017·Granted Dec 24, 2019·3 cites·16 claims
- 2880US11276766B2FinFET fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·1 cites·20 claims
- 2980US2025359116A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3080US2025287677A1Device providing multiple threshold voltages and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3179US12463040B2Methods for doping high-K metal gates for tuning threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 3279US12171091B2Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 3379US12068392B2FinFET fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 3479US11908745B2Semiconductor device with non-conformal gate dieletric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 20, 2024·0 cites·20 claims
- 3579US2025351521A1Semiconductor devices with reduced leakage current and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3679US2024379366A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3778US12444608B2Structure having gate spacers with projecting portions extending into a gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 3878US12433011B2Post gate dielectric processing for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 3978US2024381608A1Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4078US2025185344A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4177US12040235B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 4277US8952462B2Method and apparatus of forming a gateCHEN JIAN-HAO·Filed 2010·Granted Feb 10, 2015·4 cites·20 claims
- 4377US2025351546A1P-Type Semiconductor Devices With Different Threshold Voltages And Methods Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4477US2025261435A1Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4576US2025311307A1Forming low-resistance capping layer over metal gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4676US2025366114A1Metal caps for gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4776US2025351562A1Metal Gate Electrode Formation Of Memory DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4875US10872291B2On-chip communication system for neural network processorsALIBABA GROUP HOLDING LTD·Filed 2018·Granted Dec 22, 2020·2 cites·18 claims
- 4974US12041760B2Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 5074US2025275185A1Metal gate for gate-all-around devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 106 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →