Inventor · disambiguated record
Jisung Cheon
Also filed as: CHEON JISUNG
22 granted patents·20 citations·filing 2019–2023
91Inventor score
Files withSAMSUNG ELECTRONICS CO LTD22
Top patents by PatentIndex Score
22 records- 0195US11600632B2Vertical memory with simplified integrationSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 7, 2023·4 cites·15 claims
- 0294US11437396B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 6, 2022·3 cites·20 claims
- 0393US11456316B2Semiconductor device having word line separation layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 27, 2022·4 cites·20 claims
- 0489US11626413B2Semiconductor device including gate layer and vertical structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 11, 2023·1 cites·20 claims
- 0588US11069698B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·4 cites·20 claims
- 0685US11557604B2Semiconductor device and manufacturing method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 17, 2023·3 cites·20 claims
- 0776US12133384B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 0875US12096634B2Semiconductor device including stack structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 0972US11737270B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 1067US11678489B2Three-dimensional flash memory device including channel structures having enlarged portionsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 1165US12010849B2Semiconductor device having word line separation layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 1265US11411078B2Semiconductor devices including dummy patterns for discharging effectsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 9, 2022·1 cites·12 claims
- 1365US11342346B2Semiconductor device including gate layer and vertical structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 1464US11917819B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 1562US12219763B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 1659US12507410B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·15 claims
- 1755US11189631B2Three-dimensional flash memory device including channel structures having enlarged portionsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 30, 2021·0 cites·20 claims
- 1854US11335695B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 17, 2022·0 cites·6 claims
- 1951US11398495B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 2046US11393755B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 19, 2022·0 cites·18 claims
- 2145US11672119B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
- 2239US11508744B2Memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →