Inventor · disambiguated record
Jingjing Geng
Also filed as: GENG JINGJING
14 granted patents·4 pending applications·1 citations·filing 2019–2025
84Inventor score
Files withYANGTZE MEMORY TECH CO LTD18
Top patents by PatentIndex Score
18 records- 0186US2024389326A1Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0284US2025275141A1Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0380US11950418B2Method and structure for forming stairs in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 2, 2024·1 cites·20 claims
- 0477US12349351B2Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·19 claims
- 0573US12082414B2Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·14 claims
- 0671US12495555B2Method and structure for forming stairs in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 0767US11502098B2Methods for forming three-dimensional memeory devices with drain-select-gate cut structuresYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 0865US2023301106A1Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 0961US12021126B2Method of forming top select gate trenchesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jun 25, 2024·0 cites·7 claims
- 1061US11711921B2Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 25, 2023·0 cites·18 claims
- 1158US11937427B2Method for forming three-dimensional memory device with sacrificial channelsYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·13 claims
- 1258US11552097B2Method and structure for forming stairs in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jan 10, 2023·0 cites·16 claims
- 1355US11800707B2Three-dimensional memory device with reduced local stressYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 24, 2023·0 cites·20 claims
- 1452US11990506B2Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 21, 2024·0 cites·20 claims
- 1552US11985824B2Three-dimensional memory devices having dummy channel structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 14, 2024·0 cites·20 claims
- 1650US12048153B2Vertical memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·10 claims
- 1746US12193229B2Semiconductor device fabricationYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 1834US2022149062A1Three-dimensional nand memory device with novel dummy channel structuresYANGTZE MEMORY TECH CO LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →