Inventor · disambiguated record
Jin-Ping Han
Also filed as: HAN JIN · HAN JIN P · HAN JIN PING
69 granted patents·26 pending applications·373 citations·filing 1998–2023
98Inventor score
Top patents by PatentIndex Score
95 records- 0195US6067244AFerroelectric dynamic random access memoryUNIV YALE·Filed 1998·Granted May 23, 2000·178 cites·14 claims
- 0293US11621394B2Multi-layer phase change memory deviceIBM·Filed 2020·Granted Apr 4, 2023·2 cites·25 claims
- 0393US7838372B2Methods of manufacturing semiconductor devices and structures thereofINFINEON TECHNOLOGIES AG·Filed 2008·Granted Nov 23, 2010·25 cites·22 claims
- 0492US9934838B1Pulse shaping unit cell and array for symmetric updatingIBM·Filed 2017·Granted Apr 3, 2018·18 cites·25 claims
- 0591US10332874B2Indirect readout FETIBM·Filed 2017·Granted Jun 25, 2019·6 cites·12 claims
- 0690US8252649B2Methods of fabricating semiconductor devices and structures thereofSTAHRENBERG KNUT·Filed 2008·Granted Aug 28, 2012·16 cites·5 claims
- 0789US10468432B1BEOL cross-bar array ferroelectric synapse units for domain wall movementIBM·Filed 2018·Granted Nov 5, 2019·7 cites·20 claims
- 0888US10319818B2Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-endIBM·Filed 2017·Granted Jun 11, 2019·4 cites·10 claims
- 0987US7772676B2Strained semiconductor device and method of making sameINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 10, 2010·13 cites·17 claims
- 1086US9929250B1Semiconductor device including optimized gate stack profileIBM·Filed 2016·Granted Mar 27, 2018·5 cites·19 claims
- 1185US7893502B2Threshold voltage improvement employing fluorine implantation and adjustment oxide layerIBM·Filed 2009·Granted Feb 22, 2011·12 cites·17 claims
- 1283US7696019B2Semiconductor devices and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2006·Granted Apr 13, 2010·9 cites·29 claims
- 1381US10686039B2Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-endIBM·Filed 2019·Granted Jun 16, 2020·2 cites·18 claims
- 1481US9748358B2Gap fill of metal stack in replacement gate processIBM·Filed 2015·Granted Aug 29, 2017·3 cites·20 claims
- 1581US7935593B2Stress optimization in dual embedded epitaxially grown semiconductor processingSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 3, 2011·7 cites·27 claims
- 1680US11948059B2Media capture device with power saving and encryption features for partitioned neural networkIBM·Filed 2020·Granted Apr 2, 2024·1 cites·19 claims
- 1780US8198194B2Methods of forming p-channel field effect transistors having SiGe source/drain regionsYANG JONG HO·Filed 2010·Granted Jun 12, 2012·8 cites·11 claims
- 1878US10680105B2Mobile ferroelectric single domain wall implementation of a symmetric resistive processing unitIBM·Filed 2017·Granted Jun 9, 2020·2 cites·6 claims
- 1978US7737468B2Semiconductor devices having recesses filled with semiconductor materialsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jun 15, 2010·6 cites·9 claims
- 2077US7800182B2Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the sameINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 21, 2010·6 cites·17 claims
- 2176US11889773B2Multi-layer phase change memory deviceIBM·Filed 2023·Granted Jan 30, 2024·0 cites·20 claims
- 2276US11244999B2Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-endIBM·Filed 2019·Granted Feb 8, 2022·1 cites·16 claims
- 2376US8063449B2Semiconductor devices and methods of manufacture thereofHAN JIN-PING·Filed 2009·Granted Nov 22, 2011·6 cites·22 claims
- 2475US10395713B2One-transistor synapse cell with weight adjustmentIBM·Filed 2017·Granted Aug 27, 2019·3 cites·9 claims
- 2575US9142547B2Methods of manufacturing resistors and structures thereofSTAHRENBERG KNUT·Filed 2011·Granted Sep 22, 2015·4 cites·24 claims
- 2674US11195089B2Multi-terminal cross-point synaptic device using nanocrystal dot structuresIBM·Filed 2018·Granted Dec 7, 2021·2 cites·17 claims
- 2774US10381061B2One-transistor synapse cell with weight adjustmentIBM·Filed 2017·Granted Aug 13, 2019·3 cites·9 claims
- 2872US7652336B2Semiconductor devices and methods of manufacture thereofIBM·Filed 2007·Granted Jan 26, 2010·4 cites·29 claims
- 2970US12150393B2Heater for phase change material memory cellIBM·Filed 2022·Granted Nov 19, 2024·0 cites·19 claims
- 3069US7795107B2Method for forming isolation structuresINFINEON TECHNOLOGIES AG·Filed 2009·Granted Sep 14, 2010·3 cites·29 claims
- 3168US7951664B2Methods of manufacturing resistors and structures thereofINFINEON TECHNOLOGIES AG·Filed 2009·Granted May 31, 2011·3 cites·17 claims
- 3267US12324365B2Proximity heater to lower RRAM forming voltageIBM·Filed 2022·Granted Jun 3, 2025·0 cites·25 claims
- 3367US10113145B2Paenibacillus sp. strain, cultivation method and use of the sameBRIGHT DAIRY & FOOD CO LTD·Filed 2014·Granted Oct 30, 2018·1 cites·5 claims
- 3466US8647929B2Semiconductor devices and methods of manufacturing thereofHAN JIN-PING·Filed 2010·Granted Feb 11, 2014·2 cites·27 claims
- 3565US11094820B2Mobile ferroelectric single domain wall implementation of a symmetric resistive processing unitIBM·Filed 2020·Granted Aug 17, 2021·0 cites·15 claims
- 3665US10804261B2Indirect readout FETIBM·Filed 2019·Granted Oct 13, 2020·0 cites·20 claims
- 3764US11107835B2BEOL cross-bar array ferroelectric synapse units for domain wall movementIBM·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 3864US7615840B2Device performance improvement using flowfill as material for isolation structuresINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 10, 2009·2 cites·11 claims
- 3962US10635970B2Racetrack synapse for neuromorphic applicationsIBM·Filed 2016·Granted Apr 28, 2020·1 cites·17 claims
- 4062US10559562B2Indirect readout FETIBM·Filed 2019·Granted Feb 11, 2020·0 cites·20 claims
- 4161US10686040B2Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-endIBM·Filed 2019·Granted Jun 16, 2020·0 cites·18 claims
- 4261US8017472B2CMOS devices having stress-altering material lining the isolation trenches and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 13, 2011·2 cites·31 claims
- 4361US7955936B2Semiconductor fabrication process including an SiGe rework methodCHARTERED SEMICONDUCTOR MFG·Filed 2008·Granted Jun 7, 2011·1 cites·19 claims
- 4461US2025008848A1Low drift phase change material composite matrixIBM·Filed 2023·Application pending·0 cites
- 4561US2025185258A1Phase change memory with partial sidewall spacer contactIBM·Filed 2023·Application pending·0 cites
- 4659US8138055B2Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the sameHAN JIN-PING·Filed 2010·Granted Mar 20, 2012·1 cites·23 claims
- 4758US11910731B2Embedded heater in a phase change memory materialIBM·Filed 2021·Granted Feb 20, 2024·0 cites·9 claims
- 4858US10818333B2Circuitry for one-transistor synapse cell and operation method of the sameIBM·Filed 2019·Granted Oct 27, 2020·0 cites·4 claims
- 4958US10229984B2Gap fill of metal stack in replacement gate processIBM·Filed 2017·Granted Mar 12, 2019·0 cites·20 claims
- 5058US9209088B2Semiconductor devices and methods of manufacture thereofELLER MANFRED·Filed 2007·Granted Dec 8, 2015·2 cites·21 claims
Showing the top 50 of 95 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →