Inventor · disambiguated record
Jianquan Jia
Also filed as: Jia Jianquan
32 granted patents·16 pending applications·53 citations·filing 2019–2025
95Inventor score
Top patents by PatentIndex Score
48 records- 0196US11501822B2Non-volatile memory device and control methodYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Nov 15, 2022·5 cites·20 claims
- 0295US11024371B2Method of programming memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 1, 2021·15 cites·10 claims
- 0395US10991438B1Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Apr 27, 2021·7 cites·20 claims
- 0494US11862230B2Non-volatile memory device and control methodYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 0594US11222674B2Method of sequentially biasing bias lines in memory device for program disturbance reduction and memory device utilizing sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 11, 2022·5 cites·9 claims
- 0692US11710529B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 25, 2023·2 cites·22 claims
- 0789US10957409B1Method of performing programming operation and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 23, 2021·3 cites·20 claims
- 0889US2025054539A1Method of programming memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0987US11081164B2Non-volatile memory device and control methodYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Aug 3, 2021·5 cites·16 claims
- 1085US10957408B1Non-volatile memory device and control methodYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Mar 23, 2021·6 cites·16 claims
- 1183US2025372184A1Method of reducing program disturbance in memory device and memory device utilizing sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1282US12159665B2Method of programming memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 1382US2025095715A1Non-volatile memory device and control methodYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1478US12512145B2Non-volatile memory device and control methodYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·19 claims
- 1577US2025308598A1Programming method for semiconductor device and semiconductor deviceYANGTZE MEMORY ECHNOLOGIES CO LTD·Filed 2025·Application pending·0 cites
- 1677US2024363169A1Memory device and erasing and verification method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1776US12100456B2Memory device and erasing and verification method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 1874US11848058B2Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 19, 2023·0 cites·20 claims
- 1974US10885990B1Method of performing programming operation and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jan 5, 2021·3 cites·20 claims
- 2073US12176043B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 2170US12499949B2Memory devices and operating methods thereof, memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 2270US11676665B2Memory device and erasing and verification method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·18 claims
- 2368US12412609B2Method of reducing program disturbance in memory device and memory device utilizing sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 2468US11705190B2Method of programming memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 2567US11626170B2Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 2667US2025006253A1Systems, methods and media of optimization of temporary read errors in 3d nand memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2766US11158380B1Memory device and erasing and verification method thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 26, 2021·0 cites·16 claims
- 2865US2025191661A1Control method and apparatus for memory, and storage mediumYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2964US12354668B2Programming method for semiconductor device and semiconductor deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 3064US12136453B2Systems, methods and media of optimization of temporary read errors in 3D NAND memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 3164US11423995B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 23, 2022·0 cites·20 claims
- 3262US12254930B2Control method for memory erase operations, apparatus, and storage medium thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 18, 2025·0 cites·20 claims
- 3361US11676646B2Method of reducing program disturbance in memory device and memory device utilizing sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 3460US11205494B2Non-volatile memory device and control methodYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 21, 2021·0 cites·18 claims
- 3559US11398284B2Method of performing programming operation and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 26, 2022·0 cites·20 claims
- 3655US11864379B2Three-dimensional memory and control method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·14 claims
- 3753US2024164097A1Three-dimensional memory, fabricating method thereof and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 3849US2025174277A1Memory device and program operation thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 3948US2025324592A1Managing three-dimensional semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 4048US2024304246A1Method and system for adjustable top select gate controlYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4147US12216907B2Method of improving programming operations in 3D NAND systemsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 4247US2025029660A1Programming method of a memory, memory and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4346US2025068558A1Method for operating a memory, a memory and a memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4445US12165716B2Method of performing programming operation and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·19 claims
- 4545US2024321364A1Operation method of memory device, memory device, memory system, and electronic apparatusYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4645US2025245176A1Memory, operation method thereof and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 4745US2025095744A1Memory device, operation method thereof, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 4835US11417397B2Non-volatile memory device and control method for mitigating memory cell overwrittenYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 16, 2022·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →