Inventor · disambiguated record
Ji Heng Jiang
Also filed as: JIANG JI HENG
9 granted patents·1 pending application·15 citations·filing 2017–2023
83Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD10
Top patents by PatentIndex Score
10 records- 0191US10868053B2Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 0290US10211244B2Image sensor device with reflective structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 19, 2019·5 cites·19 claims
- 0389US10438980B2Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 8, 2019·4 cites·20 claims
- 0484US10056427B1Front side illuminated image sensor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·4 cites·20 claims
- 0583US2023387150A1Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0678US11990493B2Image sensor device with reflective structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 0774US11830892B2Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 28, 2023·0 cites·20 claims
- 0871US11342372B2Image sensor device with reflective layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 0971US10734427B2Method for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·0 cites·20 claims
- 1062US10553628B2Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →