Inventor · disambiguated record
Jimmy Jianan Kan
Also filed as: KAN JIMMY · Kan Jimmy Jianan
23 granted patents·4 pending applications·256 citations·filing 2014–2019
95Inventor score
Files withQUALCOMM INC27
Top patents by PatentIndex Score
27 records- 0198US9634237B2Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devicesQUALCOMM INC·Filed 2014·Granted Apr 25, 2017·46 cites·5 claims
- 0297US9824735B1System and method to generate a random numberQUALCOMM INC·Filed 2016·Granted Nov 21, 2017·34 cites·24 claims
- 0397US9704919B1High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cellsQUALCOMM INC·Filed 2016·Granted Jul 11, 2017·30 cites·20 claims
- 0497US9589619B2Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropyQUALCOMM INC·Filed 2015·Granted Mar 7, 2017·22 cites·21 claims
- 0596US10381060B2High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell arrayQUALCOMM INC·Filed 2016·Granted Aug 13, 2019·25 cites·18 claims
- 0694US9590010B1Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layerQUALCOMM INC·Filed 2016·Granted Mar 7, 2017·18 cites·29 claims
- 0793US9870811B2Physically unclonable function based on comparison of MTJ resistancesQUALCOMM INC·Filed 2016·Granted Jan 16, 2018·10 cites·15 claims
- 0893US9620706B2Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction deviceQUALCOMM INC·Filed 2014·Granted Apr 11, 2017·10 cites·30 claims
- 0993US9595917B2Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizerQUALCOMM INC·Filed 2015·Granted Mar 14, 2017·13 cites·20 claims
- 1091US9646670B2Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropyQUALCOMM INC·Filed 2016·Granted May 9, 2017·10 cites·20 claims
- 1190US10096649B2Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devicesQUALCOMM INC·Filed 2016·Granted Oct 9, 2018·7 cites·18 claims
- 1289US10224368B2Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit pathQUALCOMM INC·Filed 2017·Granted Mar 5, 2019·9 cites·30 claims
- 1386US10134808B2Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)QUALCOMM INC·Filed 2016·Granted Nov 20, 2018·8 cites·27 claims
- 1483US10547460B2Message-based key generation using physical unclonable function (PUF)QUALCOMM INC·Filed 2016·Granted Jan 28, 2020·4 cites·30 claims
- 1583US9728718B2Magnetic tunnel junction (MTJ) device arrayQUALCOMM INC·Filed 2016·Granted Aug 8, 2017·3 cites·20 claims
- 1679US10431734B2Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memoryQUALCOMM INC·Filed 2017·Granted Oct 1, 2019·1 cites·12 claims
- 1779US10103319B2Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devicesQUALCOMM INC·Filed 2017·Granted Oct 16, 2018·1 cites·16 claims
- 1876US9570509B2Magnetic tunnel junction (MTJ) device arrayQUALCOMM INC·Filed 2015·Granted Feb 14, 2017·2 cites·30 claims
- 1975US9444035B2Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabricationQUALCOMM INC·Filed 2014·Granted Sep 13, 2016·2 cites·24 claims
- 2064US10833254B2Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memoryQUALCOMM INC·Filed 2019·Granted Nov 10, 2020·0 cites·5 claims
- 2163US9385309B2Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materialsQUALCOMM INC·Filed 2014·Granted Jul 5, 2016·1 cites·12 claims
- 2254US9595666B2Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materialsQUALCOMM INC·Filed 2016·Granted Mar 14, 2017·0 cites·14 claims
- 2353US2017141729A1Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizerQUALCOMM INC·Filed 2017·Application pending·0 cites
- 2443US2018266991A1Magneto-impedance (mi) sensors employing current confinement and exchange bias layer(s) for increased sensitivityQUALCOMM INC·Filed 2017·Application pending·0 cites
- 2540US9813049B2Comparator including a magnetic tunnel junction (MTJ) device and a transistorQUALCOMM INC·Filed 2015·Granted Nov 7, 2017·0 cites·30 claims
- 2636US2017077387A1Magnetic tunnel junction (mtj) devices particularly suited for efficient spin-torque-transfer (stt) magnetic random access memory (mram) (stt mram)QUALCOMM INC·Filed 2015·Application pending·0 cites
- 2731US2017059669A1Magnetic field enhancing backing plate for mram wafer testingQUALCOMM INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →