Inventor · disambiguated record
Jin Yeong Kang
Also filed as: KANG JIN-YEONG
25 granted patents·6 pending applications·238 citations·filing 1993–2013
96Inventor score
Files withKOREA ELECTRONICS TELECOMM23KANG JIN-YEONG4BAE HYUN CHEOL1DO LEE MI1ELECTRONICS & TELECOMM RES1
Top patents by PatentIndex Score
31 records- 0189US8247854B2CMOS image sensorKANG JIN YEONG·Filed 2010·Granted Aug 21, 2012·7 cites·9 claims
- 0289US7115459B2Method of fabricating SiGe Bi-CMOS deviceKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Oct 3, 2006·18 cites·10 claims
- 0387US7902577B2Image sensor having heterojunction bipolar transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Mar 8, 2011·10 cites·5 claims
- 0487US7741665B2High-quality CMOS image sensor and photo diodeKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Jun 22, 2010·9 cites·7 claims
- 0583US6661325B2Spiral inductor having parallel-branch structureKOREA ELECTRONICS TELECOMM·Filed 2001·Granted Dec 9, 2003·34 cites·3 claims
- 0682US8421144B2Electrically erasable programmable read-only memory and manufacturing method thereofKANG JIN-YEONG·Filed 2010·Granted Apr 16, 2013·7 cites·16 claims
- 0781US7943995B2NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2008·Granted May 17, 2011·7 cites·5 claims
- 0877US8730728B2EEPROM cell with transfer gateKANG JIN-YEONG·Filed 2012·Granted May 20, 2014·6 cites·11 claims
- 0975US7375504B2Reference current generatorKOREA ELECTRONICS TELECOMM·Filed 2005·Granted May 20, 2008·10 cites·16 claims
- 1075US6346861B2Phase locked loop with high-speed locking characteristicKOREA ELECTRONICS TELECOMM·Filed 2000·Granted Feb 12, 2002·22 cites·15 claims
- 1172US7348632B2NMOS device formed on SOI substrate and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Mar 25, 2008·14 cites·3 claims
- 1272US6469609B2Method of fabricating silver inductorKOREA ELECTRONICS TELECOMM·Filed 2000·Granted Oct 22, 2002·18 cites·13 claims
- 1369US6980075B2Inductor having high quality factor and unit inductor arranging method thereofKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Dec 27, 2005·15 cites·6 claims
- 1468US7534680B2Bipolar transistor, BiCMOS device, and method for fabricating thereofKOREA ELECTRONICS TELECOMM·Filed 2007·Granted May 19, 2009·4 cites·1 claims
- 1567US7994553B2CMOS-based planar type silicon avalanche photo diode using silicon epitaxial layer and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2008·Granted Aug 9, 2011·1 cites·3 claims
- 1666US6791105B2Optoelectronic device having dual-structural nano dot and method for manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Sep 14, 2004·12 cites·6 claims
- 1762US9058891B2EEPROM cell and EEPROM deviceKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Jun 16, 2015·2 cites·20 claims
- 1860US6686640B2Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistorKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Feb 3, 2004·10 cites·7 claims
- 1958US7855366B2Bipolar junction transistor-based uncooled infrared sensor and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2008·Granted Dec 21, 2010·1 cites·4 claims
- 2058US7094617B2Optoelectronic device having dual-structural nano dot and method for manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Aug 22, 2006·6 cites·7 claims
- 2157US7157977B2Automatic gain control feedback amplifierKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Jan 2, 2007·10 cites·8 claims
- 2253US7170355B2Voltage-controlled oscillator using current feedback networkKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Jan 30, 2007·5 cites·16 claims
- 2353US5389796AVacuum transistor having an optical gateKOREA ELECTRONICS TELECOMM·Filed 1993·Granted Feb 14, 1995·10 cites·3 claims
- 2445US8513655B2Organic light emitting diode and manufacturing method thereofDO LEE MI·Filed 2010·Granted Aug 20, 2013·0 cites·15 claims
- 2543US2014159875A1Terminal and operation control method thereofKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 2642US8927433B2Conductive via hole and method for forming conductive via holeKANG JIN-YEONG·Filed 2010·Granted Jan 6, 2015·0 cites·15 claims
- 2741US2011084603A1Inorganic electroluminescent device and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2010·Application pending·0 cites
- 2837US2014192597A1Circuit for controlling eeprom cellKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 2935US2005139862A1Self-aligned heterojunction bipolar transistor and manufacturing method thereofFiled 2003·Application pending·0 cites
- 3034US2006125046A1Integrated inductor and method of fabricating the sameBAE HYUN CHEOL·Filed 2005·Application pending·0 cites
- 3130US2013279268A1Eeprom cell with storage capacitorELECTRONICS & TELECOMM RES·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →