Inventor · disambiguated record
Jin-Bum Kim
Also filed as: KIM JIN B · KIM JIN-BUM
73 granted patents·25 pending applications·290 citations·filing 1990–2025
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD57KIM JIN-BUM14DOOSAN HEAVY IND & CONSTRUCTION CO LTD5ACORNSOFT CO LTD2KIM SEOK-HOON2
Top patents by PatentIndex Score
98 records- 0196US10297601B2Semiconductor devices with layers commonly contacting fins and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 21, 2019·19 cites·19 claims
- 0295US9054189B1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 9, 2015·28 cites·15 claims
- 0394US11705503B2Semiconductor device including non-sacrificial gate spacers and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 18, 2023·3 cites·18 claims
- 0494US10211322B1Semiconductor device including channel pattern and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 19, 2019·12 cites·16 claims
- 0594US8921940B2Semiconductor device and a method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 30, 2014·20 cites·11 claims
- 0694US8039902B2Semiconductor devices having Si and SiGe epitaxial layersSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·39 cites·15 claims
- 0793US9679977B2Semiconductor device and method of fabricating the sameKIM JIN-BUM·Filed 2015·Granted Jun 13, 2017·9 cites·20 claims
- 0893US9324623B1Method of manufacturing semiconductor device having active finsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 26, 2016·21 cites·20 claims
- 0992US9397219B2Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devicesKIM SEOK-HOON·Filed 2015·Granted Jul 19, 2016·8 cites·20 claims
- 1091US10672764B2Integrated circuit semiconductor devices including a metal oxide semiconductor (MOS) transistorSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 2, 2020·8 cites·20 claims
- 1191US9859387B2Semiconductor device having contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 2, 2018·9 cites·17 claims
- 1291US8324043B2Methods of manufacturing semiconductor devices with Si and SiGe epitaxial layersKIM JIN-BUM·Filed 2011·Granted Dec 4, 2012·13 cites·5 claims
- 1390US10515798B2Method of fabricating device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 24, 2019·4 cites·20 claims
- 1488US8912063B2Semiconductor device having blocking pattern and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 16, 2014·12 cites·19 claims
- 1586US10084049B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 25, 2018·4 cites·19 claims
- 1686US9972716B2Semiconductor devicesKIM JIN BUM·Filed 2015·Granted May 15, 2018·5 cites·18 claims
- 1786US9368495B2Semiconductor devices having bridge layer and methods of manufacturing the sameKIM SEOK-HOON·Filed 2014·Granted Jun 14, 2016·6 cites·17 claims
- 1882US9608117B2Semiconductor devices including a finFETSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 28, 2017·4 cites·20 claims
- 1982US9275995B2Semiconductor devices having composite spacers containing different dielectric materialsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 1, 2016·6 cites·15 claims
- 2081US10864546B2System for coating heat transfer tube for condenserDOOSAN HEAVY IND & CONSTRUCTION CO LTD·Filed 2018·Granted Dec 15, 2020·1 cites·9 claims
- 2180US11251307B2Device comprising 2D materialSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 15, 2022·2 cites·20 claims
- 2280US8815454B2Lithium secondary batteryKIM YONG-SHIK·Filed 2008·Granted Aug 26, 2014·6 cites·17 claims
- 2379US10541127B2Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devicesTAK YONG SUK·Filed 2016·Granted Jan 21, 2020·4 cites·16 claims
- 2479US9735158B2Semiconductor devices having bridge layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 15, 2017·2 cites·20 claims
- 2578US9087900B1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 21, 2015·4 cites·16 claims
- 2677USD1021689SRobot for delivery of goodsNEUBILITY·Filed 2022·Granted Apr 9, 2024·7 cites·1 claims
- 2775US10600646B2Method of fabricating device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 24, 2020·1 cites·14 claims
- 2875US10557672B2Heat transfer tube having rare-earth oxide superhydrophobic surface and method for manufacturing the sameDOOSAN HEAVY IND & CONSTRUCTION CO LTD·Filed 2017·Granted Feb 11, 2020·1 cites·16 claims
- 2973US7595246B2Methods of manufacturing field effect transistors having elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 29, 2009·4 cites·17 claims
- 3072USD1026732SRobot for delivery of goodsNEUBILITY·Filed 2022·Granted May 14, 2024·5 cites·1 claims
- 3172US9054217B2Method for fabricating semiconductor device having an embedded source/drainSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 9, 2015·2 cites·18 claims
- 3271US8586223B2Cylindrical secondary batteryBAK HYO-RIM·Filed 2010·Granted Nov 19, 2013·2 cites·16 claims
- 3368US11735663B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 3468US9899497B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 20, 2018·1 cites·20 claims
- 3567US11421950B2Heat transfer tube having rare-earth oxide superhydrophobic surface and method for manufacturing the sameDOOSAN HEAVY IND & CONSTRUCTION CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·8 claims
- 3667US8257871B2Electrolyte for lithium secondary battery and lithium secondary battery including the samePARK NA-RAE·Filed 2007·Granted Sep 4, 2012·1 cites·24 claims
- 3765US11233150B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·35 claims
- 3864US12464779B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 3964US8598024B2Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the methodKIM JIN-BUM·Filed 2011·Granted Dec 3, 2013·1 cites·18 claims
- 4063US8409947B2Method of manufacturing semiconductor device having stress creating layerKIM JIN-BUM·Filed 2010·Granted Apr 2, 2013·1 cites·9 claims
- 4163US8101303B2Lithium battery with lithium salt mixtureKIM JEOM-SOO·Filed 2007·Granted Jan 24, 2012·1 cites·20 claims
- 4261US10155245B2System for coating heat transfer tube for condenserDOOSAN HEAVY IND & CONSTRUCTION CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·10 claims
- 4360US8877583B2Method of manufacturing a semiconductor deviceKIM JIN-BUM·Filed 2012·Granted Nov 4, 2014·1 cites·10 claims
- 4459US11469237B2Semiconductor devices with layers commonly contacting fins and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 11, 2022·0 cites·15 claims
- 4559US8470703B2Semiconductor device and method of fabricating the sameLEE BYUNG-HAK·Filed 2011·Granted Jun 25, 2013·2 cites·16 claims
- 4659US8361860B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 29, 2013·1 cites·15 claims
- 4759US2024266288A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4859US2024413206A1Semiconductor device with doped source/drain regionSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4959US2024258176A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTYRONICS CO LTD·Filed 2023·Application pending·0 cites
- 5059US2024363712A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 98 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →