Inventor · disambiguated record
Jiun-Ming Kuo
Also filed as: KUO JIUN-MING
42 granted patents·27 pending applications·33 citations·filing 2012–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD67TAIWAN SEMICONDUCTOR MFG1TAIWAN SEMICONDUCTOR MFG CON LTD1
Top patents by PatentIndex Score
69 records- 0195US11888049B2Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 0294US11437245B2Germanium hump reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·5 cites·20 claims
- 0393US12113113B2Semiconductor device with a core-shell feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 8, 2024·2 cites·20 claims
- 0490US11316030B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 0589US11830948B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 28, 2023·2 cites·14 claims
- 0689US11616133B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 28, 2023·1 cites·20 claims
- 0788US10497577B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 3, 2019·4 cites·20 claims
- 0886US11862709B2Inner spacer structure and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·1 cites·20 claims
- 0986US8901627B2Jog design in integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 2, 2014·8 cites·19 claims
- 1086US2025359273A1Finfet having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1184US9355912B2Jog design in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 31, 2016·5 cites·20 claims
- 1284US2025311265A1Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1383US12349381B2Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1481US12255102B2Methods of forming of inner spacer structure using semiconductor material with variable germanium concentrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 1580US12294028B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
- 1680US12230712B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1779US2025359215A1Transition between different active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1878US2025194141A1Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1976US11735665B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 2076US2025234581A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2176US2025311387A1Multi-Gate Transistor Channel Height AdjustmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2276US2025212498A1Inner spacer structure and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2376US2024387533A1Bent fin devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2475US11923250B2Fin loss preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 2575US10964548B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·1 cites·20 claims
- 2675US2025015080A1Fin-type field effect transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2775US2025118559A1Mandrel structures and methods of fabricating the same in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2875US2025056851A1Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2975US2025364259A1Semiconductor fin cut process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3074US11532733B1Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 3174US2024363635A1Semiconductor device with varying gate dimensions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3274US2024379673A1Gate isolation features and methods of fabricating the same in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3373US2024371959A1Semiconductor device with a core-shell feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3471US11735430B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 3571US11404576B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 3671US2024021612A1Bent fin devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3770US12426347B2Multi-gate transistor channel height adjustmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 3870US12205907B2Seal ring structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 21, 2025·0 cites·20 claims
- 3969US11848241B2Semiconductor structure and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 4069US2023124471A1Finfet having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4168US12206004B2Gate all around device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 4268US2024371697A1Active region cut processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4367US12080715B2Semiconductor device with varying gate dimensions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 4467US2025169111A1Gate all around device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4567US2023387213A1Silicon-germanium fins and methods of processing the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4666US12249539B2Multigate device structure with engineered cladding and method making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 4766US12176212B2Mandrel structures and methods of fabricating the same in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 24, 2024·0 cites·20 claims
- 4866US12166076B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
- 4966US11854819B2Germanium hump reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 5066US11791336B2Bent fin devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·0 cites·20 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →