Inventor · disambiguated record
Jih-Chang Lien
Also filed as: LIEN JIH-CHANG · RAO G R MOHAN
16 granted patents·732 citations·filing 1976–2003
95Inventor score
Top patents by PatentIndex Score
16 records- 0196US4376947AElectrically programmable floating gate semiconductor memory deviceTEXAS INSTRUMENTS INC·Filed 1979·Granted Mar 15, 1983·85 cites·3 claims
- 0292US6734066B2Method for fabricating split gate flash memory cellNANYA TECHNOLOGY CORP·Filed 2002·Granted May 11, 2004·62 cites·33 claims
- 0392US5680345ANonvolatile memory cell with vertical gate overlap and zero birds beaksADVANCED MICRO DEVICES INC·Filed 1995·Granted Oct 21, 1997·80 cites·17 claims
- 0491US4987465AElectro-static discharge protection device for CMOS integrated circuit inputsADVANCED MICRO DEVICES INC·Filed 1988·Granted Jan 22, 1991·71 cites·11 claims
- 0590US4110776ASemiconductor integrated circuit with implanted resistor element in polycrystalline silicon layerTEXAS INSTRUMENTS INC·Filed 1976·Granted Aug 29, 1978·70 cites·21 claims
- 0687US4467453AElectrically programmable floating gate semiconductor memory deviceTEXAS INSTRUMENTS INC·Filed 1983·Granted Aug 21, 1984·45 cites·3 claims
- 0786US5661055AMethod of making nonvolatile memory cell with vertical gate overlap and zero birds' beaksADVANCED MICRO DEVICES INC·Filed 1995·Granted Aug 26, 1997·50 cites·23 claims
- 0885US4635347AMethod of fabricating titanium silicide gate electrodes and interconnectionsADVANCED MICRO DEVICES INC·Filed 1985·Granted Jan 13, 1987·70 cites·5 claims
- 0984US4208781ASemiconductor integrated circuit with implanted resistor element in polycrystalline silicon layerTEXAS INSTRUMENTS INC·Filed 1978·Granted Jun 24, 1980·45 cites·15 claims
- 1079US4370798AInterlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline siliconTEXAS INSTRUMENTS INC·Filed 1981·Granted Feb 1, 1983·48 cites·6 claims
- 1176US4514897AElectrically programmable floating gate semiconductor memory deviceTEXAS INSTRUMENTS INC·Filed 1984·Granted May 7, 1985·27 cites·5 claims
- 1272US4408385ASemiconductor integrated circuit with implanted resistor element in polycrystalline silicon layerTEXAS INSTRUMENTS INC·Filed 1980·Granted Oct 11, 1983·38 cites·3 claims
- 1361US4291328AInterlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline siliconTEXAS INSTRUMENTS INC·Filed 1979·Granted Sep 22, 1981·18 cites·4 claims
- 1458US6521543B2Multiple exposure methodNANYA TECHNOLOGY CORP·Filed 2001·Granted Feb 18, 2003·5 cites·10 claims
- 1553US4234889AMetal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline siliconTEXAS INSTRUMENTS INC·Filed 1977·Granted Nov 18, 1980·15 cites·6 claims
- 1649US7005698B2Split gate flash memory cellNANYA TECHNOLOGY CORP·Filed 2003·Granted Feb 28, 2006·3 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →