Inventor · disambiguated record
Jiunn-Jyi Lin
Also filed as: LIN JIUNN-JYI
8 granted patents·265 citations·filing 1991–2004
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG8
Top patents by PatentIndex Score
8 records- 0185US5252515AMethod for field inversion free multiple layer metallurgy VLSI processingTAIWAN SEMICONDUCTOR MFG·Filed 1991·Granted Oct 12, 1993·61 cites·20 claims
- 0277US5334554ANitrogen plasma treatment to prevent field device leakage in VLSI processingTAIWAN SEMICONDUCTOR MFG·Filed 1992·Granted Aug 2, 1994·69 cites·17 claims
- 0375US5286667AModified and robust self-aligning contact processTAIWAN SEMICONDUCTOR MFG·Filed 1992·Granted Feb 15, 1994·44 cites·13 claims
- 0473US5629237ATaper etching without re-entrance profileTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted May 13, 1997·53 cites·14 claims
- 0558US7015129B2Bond pad scheme for Cu processTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 21, 2006·7 cites·20 claims
- 0654US5461254AMethod and resulting device for field inversion free multiple layer metallurgy VLSI processingTAIWAN SEMICONDUCTOR MFG·Filed 1994·Granted Oct 24, 1995·14 cites·16 claims
- 0749US6844626B2Bond pad scheme for Cu processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 18, 2005·3 cites·13 claims
- 0839US5248384ARapid thermal treatment to eliminate metal void formation in VLSI manufacturing processTAIWAN SEMICONDUCTOR MFG·Filed 1991·Granted Sep 28, 1993·14 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →