Inventor · disambiguated record
Jingyu Lin
Also filed as: LIN JINGYU
21 granted patents·4 pending applications·1,236 citations·filing 1990–2023
96Inventor score
Files withUNIV TEXAS TECH SYSTEM6AC LED LIGHTING L L C4JIANG HONGXING4UNIV KANSAS STATE4FAN ZHAOYANG2
Top patents by PatentIndex Score
25 records- 0198US7213942B2Light emitting diodes for high AC voltage operation and general lightingAC LED LIGHTING L L C·Filed 2005·Granted May 8, 2007·159 cites·71 claims
- 0297US8058663B2Micro-emitter array based full-color micro-displayFAN ZHAOYANG·Filed 2008·Granted Nov 15, 2011·151 cites·11 claims
- 0396US8272757B1Light emitting diode lamp capable of high AC/DC voltage operationFAN ZHAOYANG·Filed 2005·Granted Sep 25, 2012·104 cites·24 claims
- 0496US7221044B2Heterogeneous integrated high voltage DC/AC light emitterAC LED LIGHTING L L C·Filed 2005·Granted May 22, 2007·190 cites·47 claims
- 0595US7714348B2AC/DC light emitting diodes with integrated protection mechanismAC LED LIGHTING L L C·Filed 2007·Granted May 11, 2010·51 cites·18 claims
- 0695US7210819B2Light emitting diodes for high AC voltage operation and general lightingAC LED LIGHTING L L C·Filed 2005·Granted May 1, 2007·53 cites·51 claims
- 0795US6410940B1Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applicationsUNIV KANSAS STATE·Filed 2000·Granted Jun 25, 2002·202 cites·13 claims
- 0894US7535028B2Micro-LED based high voltage AC/DC indicator lampAC LED LIGHTING L LC·Filed 2005·Granted May 19, 2009·75 cites·24 claims
- 0994US6957899B2Light emitting diodes for high AC voltage operation and general lightingJIANG HONGXING·Filed 2002·Granted Oct 25, 2005·129 cites·32 claims
- 1093US9047818B1CMOS IC for micro-emitter based microdisplayDAY JACOB·Filed 2011·Granted Jun 2, 2015·51 cites·25 claims
- 1191US9093581B2Structures and devices based on boron nitride and boron nitride-III-nitride heterostructuresJIANG HONGXING·Filed 2012·Granted Jul 28, 2015·14 cites·14 claims
- 1288US11460723B1Semiconductor optical phased arrays (OPA's) and methods related theretoUNIV TEXAS TECH SYSTEM·Filed 2019·Granted Oct 4, 2022·4 cites·10 claims
- 1384US7498645B2Extreme ultraviolet (EUV) detectors based upon aluminum nitride (ALN) wide bandgap semiconductorsIII N TECHNOLOGY INC·Filed 2007·Granted Mar 3, 2009·11 cites·6 claims
- 1479US11195968B2Solid-state neutron detectorUNIV TEXAS TECH SYSTEM·Filed 2020·Granted Dec 7, 2021·1 cites·35 claims
- 1579US10714651B2Solid-state neutron detectorUNIV TEXAS TECH SYSTEM·Filed 2018·Granted Jul 14, 2020·1 cites·16 claims
- 1679US8227328B2Er doped III-nitride materials and devices synthesized by MOCVDJIANG HONGXING·Filed 2007·Granted Jul 24, 2012·9 cites·10 claims
- 1771US11747658B2Semiconductor optical phased arrays (OPA's) and methods related theretoUNIV TEXAS TECH SYSTEM·Filed 2022·Granted Sep 5, 2023·0 cites·11 claims
- 1860US7193784B2Nitride microlensUNIV KANSAS STATE·Filed 2004·Granted Mar 20, 2007·7 cites·19 claims
- 1958US2025180766A1Semiconductor Neutron DetectorsUNIV TEXAS TECH SYSTEM·Filed 2023·Application pending·0 cites
- 2054US12322921B2Optical gain materials for high energy lasers and laser illuminators and methods of making and using sameUNIV TEXAS TECH SYSTEM·Filed 2020·Granted Jun 3, 2025·0 cites·23 claims
- 2152US2013292685A1Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride HeterostructuresJIANG HONGXING·Filed 2012·Application pending·0 cites
- 2250US5072122ACharge storage image device using persistent photoconductivity crystalsUNIV KANSAS STATE·Filed 1990·Granted Dec 10, 1991·14 cites·21 claims
- 2343US5101109APersistent photoconductivity quenching effect crystals and electrical apparatus using sameUNIV KANSAS STATE·Filed 1990·Granted Mar 31, 1992·10 cites·9 claims
- 2435US2005133816A1III-nitride quantum-well field effect transistorsFiled 2003·Application pending·0 cites
- 2535US2006138443A1Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodesIII N TECHNOLOGY INC·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →