Inventor · disambiguated record
Jia-Ming Lin
Also filed as: LIN JIA-MING
15 granted patents·8 pending applications·31 citations·filing 2003–2025
89Inventor score
Top patents by PatentIndex Score
23 records- 0196US11967504B2Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·4 cites·20 claims
- 0294US9691766B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·16 cites·13 claims
- 0393US11715762B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·2 cites·20 claims
- 0491US11610982B2Void elimination for gap-filling in high-aspect ratio trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·2 cites·20 claims
- 0591US2025366087A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0682US10658252B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·2 cites·20 claims
- 0782US10269664B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 0881US12218199B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 0981US9871100B2Trench structure of semiconductor device having uneven nitrogen distribution linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·2 cites·20 claims
- 1081US2025142904A1Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1178US12100751B2Void elimination for gap-filling in high-aspect ratio trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 1277US10854713B2Method for forming trench structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·1 cites·20 claims
- 1377US2024371981A1Void elimination for gap-filling in high-aspect ratio trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1472US12464786B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 4, 2025·0 cites·20 claims
- 1558US2024372034A1Light emitting deviceAUO CORP·Filed 2023·Application pending·0 cites
- 1657US10957545B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 23, 2021·0 cites·20 claims
- 1755US9824943B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·0 cites·20 claims
- 1850US10861701B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 8, 2020·0 cites·20 claims
- 1949US2007066747A1Method for providing an electrical insulation for an objectLEE LUCKY·Filed 2006·Application pending·0 cites
- 2046US2024364127A1Electronic device and power management method thereofWENG CHIH FAN·Filed 2023·Application pending·0 cites
- 2143US2021175425A1Method for forming perovskite layer and forming structure comprising perovskite layerIND TECH RES INST·Filed 2019·Application pending·0 cites
- 2240US2005049348A1Electrical insulation tape, film backing thereof, and method of manufacturing the film backingFiled 2003·Application pending·0 cites
- 2331US9991154B2Method for fabricating a fin field effect transistor and a shallow trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 5, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →