Inventor · disambiguated record
Jia-Zhe Liu
Also filed as: LIU JIA-ZHE
16 granted patents·12 pending applications·6 citations·filing 2017–2025
86Inventor score
Top patents by PatentIndex Score
28 records- 0182US10211297B2Semiconductor heterostructures and methods for forming sameGLOBAL WAFERS CO LTD·Filed 2017·Granted Feb 19, 2019·4 cites·21 claims
- 0276US11588014B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2022·Granted Feb 21, 2023·0 cites·10 claims
- 0376US11588015B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2022·Granted Feb 21, 2023·0 cites·10 claims
- 0476US2025015143A1Novel buffer layer structure to improve gan semiconductorsGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 0576US2024063270A1High electron mobility transistor epitaxial structureGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 0676US2024063329A1Method of manufacturing light-emitting elementGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 0775US12119382B2Buffer layer structure to improve gan semiconductorsGLOBALWAFERS CO LTD·Filed 2023·Granted Oct 15, 2024·0 cites·14 claims
- 0875US11923454B2Epitaxial structure having super-lattice laminatesGLOBALWAFERS CO LTD·Filed 2021·Granted Mar 5, 2024·1 cites·8 claims
- 0975US11532700B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2022·Granted Dec 20, 2022·0 cites·10 claims
- 1075US2024063335A1Light-emitting element structureGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 1174US2024063291A1Method for epitaxy of high electron mobility transistorGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 1272US11705489B2Buffer layer structure to improve GaN semiconductorsGLOBALWAFERS CO LTD·Filed 2018·Granted Jul 18, 2023·1 cites·12 claims
- 1372US2025275169A1Method of manufacturing high electron mobility transistor structureGLOBALWAFERS CO LTD·Filed 2025·Application pending·0 cites
- 1470US12336212B2High electron mobility transistor structure and method of manufacturing the sameGLOBALWAFERS CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·8 claims
- 1563US11316007B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2019·Granted Apr 26, 2022·0 cites·4 claims
- 1658US2024170564A1Epitaxial structureGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 1758US2024249969A1Wafer carrierGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 1857US12051724B2Semiconductor epitaxy structureGLOBALWAFERS CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·10 claims
- 1957US2025359239A1Method of manufacturing epitaxial structure and epitaxial structureGLOBALWAFERS CO LTD·Filed 2025·Application pending·0 cites
- 2057US2023378278A1Novel buffer layer structure to improve gan semiconductorsGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 2155US2023343588A1Semiconductor structure and method of fabricating the sameGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 2254US11456362B2Epitaxial structure and semiconductor deviceGLOBALWAFERS CO LTD·Filed 2020·Granted Sep 27, 2022·0 cites·13 claims
- 2351US2023290873A1High electron mobility transistor structure and method of manufacturing the sameGLOBALWAFERS CO LTD·Filed 2022·Application pending·0 cites
- 2450US11335780B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2020·Granted May 17, 2022·0 cites·16 claims
- 2549US10629718B2III-nitride epitaxial structureGLOBALWAFERS CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·21 claims
- 2647US12224322B2Epitaxial structure having diffusion barrier layerGLOBALWAFERS CO LTD·Filed 2021·Granted Feb 11, 2025·0 cites·7 claims
- 2745US12281411B2Epitaxial structureGLOBALWAFERS CO LTD·Filed 2020·Granted Apr 22, 2025·0 cites·4 claims
- 2845US10438794B2Semiconductor device and method of forming the sameGLOBALWAFERS CO LTD·Filed 2018·Granted Oct 8, 2019·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →