Inventor · disambiguated record

Jiech-Fun Lu

Also filed as: LU JIECH-FUN

87 granted patents·20 pending applications·188 citations·filing 2010–2025

99Inventor score

Technology areasH10F H10W H01L H10P H01F

Files withTAIWAN SEMICONDUCTOR MFG CO LTD99 TAIWAN SEMICONDUCTOR MFG5 LU JIECH-FUN1 TING SHYH-FANN1 WANG CHUNG CHIEN1

Top patents by PatentIndex Score

107 records

0198US10163974B2Method of forming absorption enhancement structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·21 cites·20 claims
0296US10847564B1Charge release layer to remove charge carriers from dielectric grid structures in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·5 cites·20 claims
0396US10304898B2Absorption enhancement structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·9 cites·20 claims
0496US9799721B2Integrated magnetic core inductor and methods of fabrications thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 24, 2017·21 cites·20 claims
0595US12341115B2Bond pad structure with reduced step height and increased electrical isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 24, 2025·2 cites·20 claims
0695US11600647B2Absorption enhancement structure to increase quantum efficiency of image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·3 cites·20 claims
0795US11495489B2Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·3 cites·20 claims
0895US11031434B2Self aligned grids in BSI image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·4 cites·20 claims
0995US10461145B2Method for fabricating magnetic coreTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·5 cites·20 claims
1095US10395974B1Method for forming a thin semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 27, 2019·11 cites·20 claims
1194US11869761B2Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 9, 2024·3 cites·20 claims
1294US10553474B1Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·6 cites·20 claims
1392US11652025B2Through-substrate via formation to enlarge electrochemical plating windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·2 cites·20 claims
1492US10804315B2Absorption enhancement structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·2 cites·20 claims
1592US9917121B2BSI image sensor and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·6 cites·20 claims
1692US2025366238A1Method for forming light pipe structure with high quantum efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1789US11855159B2Method for forming thin semiconductor-on-insulator (SOI) substratesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
1889US11309342B2Dummy vertical transistor structure to reduce cross talk in pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 19, 2022·2 cites·20 claims
1989US11217547B2Bond pad structure with reduced step height and increased electrical isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 4, 2022·4 cites·20 claims
2088US9006080B2Varied STI liners for isolation structures in image sensing devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·8 cites·20 claims
2188US8796805B2Multiple metal film stack in BSI chipsTING SHYH-FANN·Filed 2012·Granted Aug 5, 2014·11 cites·20 claims
2288US8278122B2Method for forming MTJ cellsLU JIECH-FUN·Filed 2010·Granted Oct 2, 2012·16 cites·17 claims
2387US12484325B2Absorption enhancement structure to increase quantum efficiency of image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·21 claims
2487US12317613B2Self aligned grids in BSI image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
2586US12419124B2Method for forming light pipe structure with high quantum efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
2686US11315972B2BSI image sensor and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·1 cites·20 claims
2786US10784150B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 22, 2020·3 cites·20 claims
2885US10510799B2Absorption enhancement structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
2985US2025366241A1Uniform trenches in semiconductor devices and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3084US12165911B2Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
3184US10833115B2Concave reflector for complementary metal oxide semiconductor image sensor (CIS)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 10, 2020·1 cites·20 claims
3284US2025275263A1Method of forming self aligned grids in bsi image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3383US11183587B2Bipolar junction transistor (BJT) comprising a multilayer base dielectric filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·1 cites·20 claims
3483US10163947B2Photodiode gate dielectric protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·20 claims
3582US9812477B2Photodiode gate dielectric protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·2 cites·20 claims
3681US10680024B2Concave reflector for complementary metal oxide semiconductor image sensor (CIS)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
3781US10170536B1Magnetic memory with metal oxide etch stop layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·4 cites·20 claims
3881US10128113B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 13, 2018·3 cites·20 claims
3981US9337225B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 10, 2016·2 cites·19 claims
4081US9293392B23DIC interconnect apparatus and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 22, 2016·4 cites·20 claims
4181US2025279380A1Bond pad structure with reduced step height and increased electrical isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4281US2025038076A1Through-substrate via formation to enlarge electrochemical plating windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4380US12002828B2Absorption enhancement structure to increase quantum efficiency of image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
4480US11830764B2Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
4580US10008531B2Varied STI liners for isolation structures in image sensing devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·3 cites·18 claims
4680US8791571B1System and method for preventing etch arcing during semiconductor processingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 29, 2014·4 cites·19 claims
4779US11948962B2Charge release layer to remove charge carriers from dielectric grid structures in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
4879US11923394B2Concave reflector for complementary metal oxide semiconductor image sensor (CIS)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
4979US2025294898A1Recessed blocking structure for blc pixelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
5078US10312278B2Front side illuminated image sensor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 4, 2019·2 cites·19 claims

Showing the top 50 of 107 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →