Inventor · disambiguated record
Jiro Ohshima
Also filed as: OHSHIMA JIRO
17 granted patents·493 citations·filing 1980–1993
95Inventor score
Top patents by PatentIndex Score
17 records- 0192US4543707AMethod of forming through holes by differential etching of stacked silicon oxynitride layersTOSHIBA KK·Filed 1984·Granted Oct 1, 1985·116 cites·3 claims
- 0286US4334349AMethod of producing semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Jun 15, 1982·64 cites·14 claims
- 0380US4975381AMethod of manufacturing super self-alignment technology bipolar transistorTOSHIBA KK·Filed 1990·Granted Dec 4, 1990·52 cites·7 claims
- 0474US4766086AMethod of gettering a semiconductor device and forming an isolation region thereinTOSHIBA KK·Filed 1987·Granted Aug 23, 1988·46 cites·18 claims
- 0569US4853760ASemiconductor device having insulating layer including polyimide filmTOKYO SHIBAURA ELECTRIC CO·Filed 1987·Granted Aug 1, 1989·36 cites·8 claims
- 0668US5102826AMethod of manufacturing a semiconductor device having a silicide layerTOSHIBA KK·Filed 1990·Granted Apr 7, 1992·30 cites·5 claims
- 0767US4871685AMethod of manufacturing bipolar transistor with self-aligned external base and emitter regionsTOSHIBA KK·Filed 1988·Granted Oct 3, 1989·33 cites·14 claims
- 0865US4717682AMethod of manufacturing a semiconductor device with conductive trench sidewallsTOSHIBA KK·Filed 1986·Granted Jan 5, 1988·30 cites·5 claims
- 0957US4853342AMethod of manufacturing semiconductor integrated circuit device having transistorTOSHIBA KK·Filed 1989·Granted Aug 1, 1989·24 cites·20 claims
- 1050US4780426AMethod for manufacturing high-breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1987·Granted Oct 25, 1988·17 cites·11 claims
- 1141US5382549AMethod of manufacturing polycrystalline silicon having columnar orientationTOSHIBA KK·Filed 1993·Granted Jan 17, 1995·9 cites·2 claims
- 1240US4479830AMethod of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment markerTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Oct 30, 1984·9 cites·5 claims
- 1339US4502207AWiring material for semiconductor device and method for forming wiring pattern therewithTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Mar 5, 1985·8 cites·2 claims
- 1437US4415372AMethod of making transistors by ion implantations, electron beam irradiation and thermal annealingTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Nov 15, 1983·7 cites·5 claims
- 1535US4426234AMethod of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealingTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Jan 17, 1984·6 cites·6 claims
- 1632US4515642AMethod of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed therebyTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted May 7, 1985·3 cites·8 claims
- 1731US4404736AMethod for manufacturing a semiconductor device of mesa typeTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Sep 20, 1983·3 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →