Inventor · disambiguated record
Jia Pan
Also filed as: PAN JIA
6 granted patents·3 pending applications·0 citations·filing 2012–2022
62Inventor score
Files withSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP3SHANGHAI HUA NEC ELECTRONICS CO LTD2HUA HONG NEC ELECTRONICS CO LTD SHANGHAI1HUA HONG SEMICONDUCTOR WUXI LTD1SHAGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORPORATION1
Top patents by PatentIndex Score
9 records- 0152US12310069B2IGBT device and method of making the sameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2022·Granted May 20, 2025·0 cites·9 claims
- 0248US11563103B2Method for manufacturing IGBT deviceHUA HONG SEMICONDUCTOR WUXI LTD·Filed 2021·Granted Jan 24, 2023·0 cites·7 claims
- 0337US11139391B2IGBT deviceSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2019·Granted Oct 5, 2021·0 cites·11 claims
- 0437US11133407B2Super-junction IGBT device and method for manufacturing sameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2019·Granted Sep 28, 2021·0 cites·15 claims
- 0535US2021376117A1Method for manufacturing an igbt deviceSHAGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORPORATION·Filed 2020·Application pending·0 cites
- 0633US2013099288A1SiGe HBT and Manufacturing Method ThereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Application pending·0 cites
- 0731US8907453B2Parasitic lateral PNP transistor and manufacturing method thereofSHANGHAI HUA NEC ELECTRONICS CO LTD·Filed 2012·Granted Dec 9, 2014·0 cites·15 claims
- 0831US8685830B2Method of filling shallow trenchesSHANGHAI HUA NEC ELECTRONICS CO LTD·Filed 2012·Granted Apr 1, 2014·0 cites·9 claims
- 0931US2013099351A1Bipolar transistor and method of manufacturing the sameHUA HONG NEC ELECTRONICS CO LTD SHANGHAI·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →