Inventor · disambiguated record
Jiaw-Ren Shih
Also filed as: SHIH JIAW-REN
61 granted patents·6 pending applications·1,220 citations·filing 1995–2022
99Inventor score
Top patents by PatentIndex Score
67 records- 0194US11616124B2Method of making fin field effect transistor (FinFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·2 cites·15 claims
- 0294US6207532B1STI process for improving isolation for deep sub-micron applicationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 27, 2001·175 cites·21 claims
- 0393US6614693B1Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 2, 2003·77 cites·72 claims
- 0492US10032869B2Fin field effect transistor (FinFET) device having position-dependent heat generation and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 24, 2018·6 cites·18 claims
- 0590US6122201AClipped sine wave channel erase method to reduce oxide trapping charge generation rate of flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 19, 2000·79 cites·39 claims
- 0688US6937457B2Decoupling capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 30, 2005·37 cites·23 claims
- 0788US6097066AElectro-static discharge protection structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Aug 1, 2000·77 cites·9 claims
- 0887US9373712B2Transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 21, 2016·7 cites·6 claims
- 0987US6214670B1Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performanceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 10, 2001·68 cites·14 claims
- 1085US6249414B1Displacement current trigger SCRTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 19, 2001·32 cites·9 claims
- 1185US6235600B1Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a teos liner depositionTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted May 22, 2001·29 cites·23 claims
- 1283US6268992B1Displacement current trigger SCRTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 31, 2001·48 cites·19 claims
- 1381US8648592B2Semiconductor device components and methodsLIN BI-LING·Filed 2011·Granted Feb 11, 2014·7 cites·20 claims
- 1480US6420221B1Method of manufacturing a highly latchup-immune CMOS I/O structureTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 16, 2002·24 cites·6 claims
- 1579US7994577B2ESD protection structures on SOI substratesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 9, 2011·6 cites·10 claims
- 1679US6459127B1Uniform current distribution SCR device for high voltage ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 1, 2002·26 cites·5 claims
- 1779US6323523B1N-type structure for n-type pull-up and down I/O protection circuitTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 27, 2001·25 cites·12 claims
- 1877US7247543B2Decoupling capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 24, 2007·6 cites·2 claims
- 1977US6614078B2Highly latchup-immune CMOS I/O structuresTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 2, 2003·21 cites·11 claims
- 2077US6362035B1Channel stop ion implantation method for CMOS integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 26, 2002·26 cites·20 claims
- 2176US6190954B1Robust latchup-immune CMOS structureTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 20, 2001·36 cites·10 claims
- 2275US12046638B2Fin field effect transistor (FinFET) device having position-dependent heat generationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·16 claims
- 2372US5783850AUndoped polysilicon gate process for NMOS ESD protection circuitsTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jul 21, 1998·40 cites·18 claims
- 2471US6541824B2Modified source side inserted anti-type diffusion ESD protection deviceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 1, 2003·14 cites·19 claims
- 2571US6426855B2ESD protection circuit for different power suppliesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 30, 2002·12 cites·4 claims
- 2670US7420793B2Circuit system for protecting thin dielectric devices from ESD induced damagesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Sep 2, 2008·4 cites·16 claims
- 2770US6747857B1Clamping circuit for stacked NMOS ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 8, 2004·15 cites·26 claims
- 2869US6762439B1Diode for power protectionTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 13, 2004·14 cites·20 claims
- 2969US6358781B1Uniform current distribution SCR device for high voltage ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 19, 2002·14 cites·5 claims
- 3069US6277723B1Plasma damage protection cell using floating N/P/N and P/N/P structureTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 21, 2001·24 cites·10 claims
- 3168US6437408B1Plasma damage protection cell using floating N/P/N and P/N/P structureTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 20, 2002·14 cites·9 claims
- 3268US5532178AGate process for NMOS ESD protection circuitsTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Jul 2, 1996·31 cites·14 claims
- 3366US7309905B2Bipolar-based SCR for electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 18, 2007·3 cites·20 claims
- 3464US6306695B1Modified source side inserted anti-type diffusion ESD protection deviceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 23, 2001·20 cites·9 claims
- 3564US5891792AESD device protection structure and process with high tilt angle GE implantTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 6, 1999·28 cites·27 claims
- 3663US6441438B1ESD protect device structureTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 27, 2002·10 cites·4 claims
- 3763US6271999B1ESD protection circuit for different power suppliesTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 7, 2001·17 cites·4 claims
- 3863US6258672B1Method of fabricating an ESD protection deviceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 10, 2001·20 cites·4 claims
- 3962US11631796B2Integrated thermoelectric devices in Fin FET technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 18, 2023·0 cites·20 claims
- 4062US11107889B2Fin field effect transistor (FinFET) device having position-dependent heat generationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 31, 2021·0 cites·20 claims
- 4162US6949802B2ESD protection structureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 27, 2005·9 cites·24 claims
- 4262US6207482B1Integration method for deep sub-micron dual gate transistor designTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 27, 2001·29 cites·25 claims
- 4359US6582997B1ESD protection scheme for outputs with resistor loadingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 24, 2003·8 cites·3 claims
- 4457US7518192B2Asymmetrical layout structure for ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 14, 2009·8 cites·33 claims
- 4556US10978440B2Circuit layout methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·0 cites·20 claims
- 4656US8288822B2ESD protection structures on SOI substratesSHIH JIAW-REN·Filed 2011·Granted Oct 16, 2012·1 cites·10 claims
- 4756US6242314B1Method for fabricating a on-chip temperature controller by co-implant polysilicon resistorTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 5, 2001·16 cites·20 claims
- 4855US2020176327A1Method of making breakdown resistant semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
- 4954US10403621B2Circuit layout, layout method and system for implementing the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 3, 2019·0 cites·20 claims
- 5053US9875964B2Semiconductor device components and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 23, 2018·0 cites·21 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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