Inventor · disambiguated record
Jin-Hyun Shin
Also filed as: SHIN JIN · SHIN JIN-HYUN
18 granted patents·2 pending applications·192 citations·filing 1999–2018
94Inventor score
Files withSAMSUNG ELECTRONICS CO LTD11HYUNDAI ELECTRONICS IND4LEE YOUNG-HO2KYEON DONG MIN1PARK JOO-HEE1
Top patents by PatentIndex Score
20 records- 0190US9525065B1Semiconductor devices including a channel pad, and methods of manufacturing semiconductor devices including a channel padKYEON DONG MIN·Filed 2015·Granted Dec 20, 2016·26 cites·16 claims
- 0286US10600805B2Vertical memory devices with common source including alternately repeated portions having different widthsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 24, 2020·5 cites·20 claims
- 0379US6939780B2Methods of forming trench isolated integrated circuit devices including groovesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 6, 2005·26 cites·16 claims
- 0479US6927447B2Flash memory devices having a sloped trench isolation structureSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 9, 2005·20 cites·16 claims
- 0579US6204125B1Method of forming a gate in a stack gate flash EEPROM cellHYUNDAI ELECTRONICS IND·Filed 2000·Granted Mar 20, 2001·26 cites·7 claims
- 0678US8642438B2Method of manufacturing an integrated circuit deviceLEE YOUNG-HO·Filed 2011·Granted Feb 4, 2014·4 cites·18 claims
- 0778US6304484B1Multi-bit flash memory cell and programming method using the sameHYUNDAI ELECTRONICS IND·Filed 2000·Granted Oct 16, 2001·27 cites·12 claims
- 0877US8487383B2Flash memory device having triple well structurePARK YOON-MOON·Filed 2010·Granted Jul 16, 2013·6 cites·20 claims
- 0975US7391082B2Semiconductor integrated circuit having resistorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·6 cites·14 claims
- 1072US9379122B2Memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 28, 2016·3 cites·17 claims
- 1172US7592665B2Non-volatile memory devices having floating gatesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 22, 2009·5 cites·9 claims
- 1271US9330931B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 3, 2016·2 cites·20 claims
- 1371US7494868B2Methods of fabricating flash memory devices having a sloped trench isolation structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 24, 2009·4 cites·12 claims
- 1466US7518210B2Trench isolated integrated circuit devices including groovesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 14, 2009·3 cites·7 claims
- 1561US6969650B2Methods of forming gate structures in nonvolatile memory devices having curved side walls formed using oxygen pathwaysSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 29, 2005·10 cites·24 claims
- 1658US8187935B2Method of forming active region structureLEE YOUNG-HO·Filed 2010·Granted May 29, 2012·1 cites·9 claims
- 1753US6221716B1Method of manufacturing a flash memory deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Apr 24, 2001·15 cites·2 claims
- 1849US2014138759A1Integrated circuit device having a resistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1948US6391665B1Method of monitoring a source contact in a flash memoryHYUNDAI ELECTRONICS IND·Filed 2000·Granted May 21, 2002·3 cites·14 claims
- 2044US2017104000A1Vertical memory devicesPARK JOO-HEE·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →