Inventor · disambiguated record
Ji-Yin Tsai
Also filed as: TSAI JI-YIN
13 granted patents·12 pending applications·2,104 citations·filing 2011–2025
90Inventor score
Top patents by PatentIndex Score
25 records- 0197US8962400B2In-situ doping of arsenic for source and drain epitaxyTSAI JI-YIN·Filed 2011·Granted Feb 24, 2015·536 cites·21 claims
- 0297US8785285B2Semiconductor devices and methods of manufacture thereofTSAI JI-YIN·Filed 2012·Granted Jul 22, 2014·1.6k cites·20 claims
- 0390US11316030B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 0489US11616133B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 28, 2023·1 cites·20 claims
- 0586US11862709B2Inner spacer structure and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·1 cites·20 claims
- 0685US12068395B2Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·1 cites·20 claims
- 0785US2025351404A1Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0881US12255102B2Methods of forming of inner spacer structure using semiconductor material with variable germanium concentrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 0979US2024371983A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1079US2025344504A1Nitride-based passivation layer at sige surface in nano-fetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1179US2025366124A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1278US2024363729A1Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1376US12159925B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 1476US8866188B1Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 21, 2014·3 cites·20 claims
- 1576US2025212498A1Inner spacer structure and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1674US2025294810A1Method and Multi-Channel Devices with Anti-Punch-Through FeaturesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1773US8878302B2Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layerTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 4, 2014·3 cites·20 claims
- 1873US2025204036A1Nitride-based passivation layer at sige surface in nano-fetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1968US2025151358A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2065US12324190B2Method and multi-channel devices with anti-punch-through featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 3, 2025·0 cites·19 claims
- 2162US11437497B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 6, 2022·0 cites·20 claims
- 2259US2025212455A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2358US2025203967A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2456US2025031435A1Stacked transistor isolation features and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2546US9887290B2Silicon germanium source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 6, 2018·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →