Inventor · disambiguated record
Jiunn-Yann Tsai
Also filed as: TSAI JIUNN-YANN
9 granted patents·290 citations·filing 1990–2000
90Inventor score
Top patents by PatentIndex Score
9 records- 0188US5851890AProcess for forming integrated circuit structure with metal silicide contacts using notched sidewall spacer on gate electrodeLSI LOGIC CORP·Filed 1997·Granted Dec 22, 1998·88 cites·16 claims
- 0282US6020242AEffective silicide blockingLSI LOGIC CORP·Filed 1997·Granted Feb 1, 2000·49 cites·19 claims
- 0382US5874342AProcess for forming MOS device in integrated circuit structure using cobalt silicide contacts as implantation mediaLSI LOGIC CORP·Filed 1997·Granted Feb 23, 1999·69 cites·22 claims
- 0460US6034401ALocal interconnection process for preventing dopant cross diffusion in shared gate electrodesLSI LOGIC CORP·Filed 1998·Granted Mar 7, 2000·22 cites·15 claims
- 0559US6495408B1Local interconnection process for preventing dopant cross diffusion in shared gate electrodesLSI LOGIC CORP·Filed 2000·Granted Dec 17, 2002·8 cites·21 claims
- 0659US6010952AProcess for forming metal silicide contacts using amorphization of exposed silicon while minimizing device degradationLSI LOGIC CORP·Filed 1997·Granted Jan 4, 2000·24 cites·21 claims
- 0749US6037262AProcess for forming vias, and trenches for metal lines, in multiple dielectric layers of integrated circuit structureLSI LOGIC CORP·Filed 1998·Granted Mar 14, 2000·16 cites·23 claims
- 0840US6147409AModified multilayered metal line structure for use with tungsten-filled vias in integrated circuit structuresLSI LOGIC CORP·Filed 1998·Granted Nov 14, 2000·10 cites·5 claims
- 0929US5024954AMethod of improving high temperature stability of PTSI/SI structureNAT SCIENCE COUNCIL·Filed 1990·Granted Jun 18, 1991·4 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →