Inventor · disambiguated record
Jiunyu Tsai
Also filed as: TSAI JIUNYU
17 granted patents·1 pending application·82 citations·filing 2016–2024
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD18
Top patents by PatentIndex Score
18 records- 0197US10504958B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·7 cites·20 claims
- 0296US10522740B2Techniques for MRAM MTJ top electrode to metal layer interface including spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·14 cites·17 claims
- 0395US10790439B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·14 cites·20 claims
- 0495US9780301B1Method for manufacturing mixed-dimension and void-free MRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·18 cites·20 claims
- 0594US11889769B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 0692US11075335B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·7 cites·20 claims
- 0791US10797230B2Techniques for MRAM MTJ top electrode to metal layer interface including spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·5 cites·20 claims
- 0890US11469372B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·2 cites·20 claims
- 0989US11005032B2Techniques for MRAM MTJ top electrode to metal layer interface including spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·4 cites·20 claims
- 1089US10109790B2Method for manufacturing mixed-dimension and void-free MRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·6 cites·20 claims
- 1177US12274183B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 1277US11189659B2Techniques for MRAM MTJ top electrode to via interfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 30, 2021·2 cites·20 claims
- 1376US2024381670A1Techniques for mram mtj top electrode to via interfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1475US11678493B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·18 claims
- 1570US12426514B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 1668US11489107B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·20 claims
- 1767US12167614B2Techniques for MRAM MTJ top electrode to via interfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
- 1866US11043531B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·1 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →