Inventor · disambiguated record

Jiann-Tyng Tzeng

Also filed as: TZENG JIANN-TYNG

271 granted patents·146 pending applications·810 citations·filing 2002–2025

99Inventor score

Technology areasH10W H10D H10P G06F H03K

Files withTAIWAN SEMICONDUCTOR MFG CO LTD396 TAIWAN SEMICONDUCTOR MFG14 CHANG YUH-HWA1 DHONG SANG HOO1 PENG SHIH-WEI1

Top patents by PatentIndex Score

417 records

0199US11545491B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·5 cites·20 claims
0299US11374005B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·5 cites·20 claims
0399US11309247B2Semiconductor device, and associated method and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·6 cites·20 claims
0499US11282829B2Integrated circuit with mixed row heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·16 cites·20 claims
0598US11862623B2Semiconductor device including source/drain contact having height below gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·3 cites·20 claims
0698US11569167B2Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·4 cites·20 claims
0798US11296070B2Integrated circuit with backside power rail and backside interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·6 cites·20 claims
0898US11158580B2Semiconductor devices with backside power distribution network and frontside through silicon viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·27 cites·20 claims
0998US10700207B2Semiconductor device integrating backside power grid and related integrated circuit and fabrication methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·46 cites·20 claims
1097US11894375B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·2 cites·20 claims
1197US11862561B2Semiconductor devices with backside routing and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 2, 2024·4 cites·20 claims
1297US11728269B2Semiconductor device, and associated method and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·2 cites·20 claims
1397US11532751B2Metal rail conductors for non-planar semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
1497US6841081B2Method for manufacturing reflective spatial light modulator mirror devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 11, 2005·159 cites·28 claims
1596US12148754B2Integrated circuit structure with hybrid cell designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·2 cites·20 claims
1696US11923301B2Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
1796US11735517B2Integrated circuit including super via and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·2 cites·20 claims
1896US11675952B2Integrated circuit, system and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·4 cites·20 claims
1996US11355487B2Layout designs of integrated circuits having backside routing tracksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·3 cites·20 claims
2096US11222157B2Pin access hybrid cell height designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·3 cites·20 claims
2196US9793211B2Dual power structure with connection pinsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·13 cites·20 claims
2296US9679994B1High fin cut fabrication processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·18 cites·20 claims
2395US12107045B2Middle-end-of-line strap for standard cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 1, 2024·1 cites·20 claims
2495US12034076B2Semiconductor device integrating backside power grid and related integrated circuit and fabrication methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 9, 2024·2 cites·20 claims
2595US12009364B2Semiconductor device and manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·2 cites·10 claims
2695US12003242B2Integrated circuit having latch with transistors of different gate widthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 4, 2024·2 cites·20 claims
2795US11948974B2Semiconductor device including vertical transistor with back side power structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·2 cites·20 claims
2895US11854974B2Advanced node interconnect routing methodologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
2995US11842967B2Semiconductor devices with backside power distribution network and frontside through silicon viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·2 cites·20 claims
3095US10878162B2Metal with buried power for increased IC device densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·13 cites·20 claims
3195US10769342B2Pin access hybrid cell height designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·8 cites·20 claims
3295US8698205B2Integrated circuit layout having mixed track standard cellTZENG JIANN-TYNG·Filed 2012·Granted Apr 15, 2014·140 cites·20 claims
3394US11942413B2Decoupling capacitors with back side power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·2 cites·20 claims
3494US11935830B2Integrated circuit with frontside and backside conductive layers and exposed backside substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·2 cites·20 claims
3594US11126775B2IC layout, method, device, and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 21, 2021·3 cites·20 claims
3694US10177133B2Semiconductor device including source/drain contact having height below gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 8, 2019·8 cites·20 claims
3793US11581300B2Semiconductor device including source/drain contact having height below gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·2 cites·20 claims
3893US11532553B2Middle-end-of-line strap for standard cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
3993US11100273B2Integrated circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·5 cites·20 claims
4093US9911697B2Power strap structure for high performance and low current densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 6, 2018·8 cites·20 claims
4193US8443306B1Planar compatible FDSOI design architectureDHONG SANG HOO·Filed 2012·Granted May 14, 2013·27 cites·20 claims
4292US11916074B2Double rule integrated circuit layouts for a dual transmission gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·1 cites·20 claims
4392US11663389B2Circuit layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·2 cites·20 claims
4492US11658119B2Backside signal interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
4592US10804402B2Metal rail conductors for non-planar semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·4 cites·20 claims
4692US10366200B2System for and method of manufacturing a layout design of an integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 30, 2019·8 cites·20 claims
4792US2025366213A1Integrated circuit and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4891US12255148B2Power distribution structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 18, 2025·2 cites·20 claims
4991US11574901B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·2 cites·20 claims
5091US10467374B2System and method for calculating cell edge leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·6 cites·20 claims

Showing the top 50 of 417 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →