Inventor · disambiguated record
Jia-Heng Wang
Also filed as: WANG JIA · Wang jia-heng
14 granted patents·4 pending applications·26 citations·filing 2014–2025
89Inventor score
Top patents by PatentIndex Score
18 records- 0197US11961886B2Semiconductor structure with conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·3 cites·20 claims
- 0297US11527614B2Semiconductor structure with conductive structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·4 cites·20 claims
- 0397US11302802B2Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·4 cites·20 claims
- 0493US10490459B2Method for source/drain contact formation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·6 cites·20 claims
- 0590US2025359213A1Semiconductor transistor structure with nanostructures and conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0685US12389646B2Semiconductor transistor structure with nanostructures and conductive structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 0783US12068396B2Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 0883US2024363733A1Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0979US11757022B2Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 1079US2024371938A1Methods of forming epitaxial source/drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1179US2025343116A1Semiconductor structure with conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1271US12406907B2Semiconductor structure with conductive_structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 1371US9537195B2Rectangular band-pass filter having recesses of less than one-quarter wavelength depth formed therein for fitting a dielectric insert with a superconductive film within the recessesINST PHYSICS CAS·Filed 2014·Granted Jan 3, 2017·4 cites·9 claims
- 1470US12119378B2Methods of forming epitaxial source/drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 15, 2024·0 cites·20 claims
- 1568US9588061B2Measuring whispering-gallery-mode resonatorINST PHYSICS CAS·Filed 2014·Granted Mar 7, 2017·5 cites·11 claims
- 1667US11217492B2Method for source/drain contact formation in semiconductor devices using common doping and common etching to n-type and p-type source/drainsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 4, 2022·0 cites·20 claims
- 1767US11145554B2Method for source/drain contact formation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·0 cites·20 claims
- 1864US10868118B2Methods of forming epitaxial source/drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →