Inventor · disambiguated record
Jinqiao Xie
Also filed as: XIE JINQIAO
21 granted patents·5 pending applications·238 citations·filing 2009–2024
93Inventor score
Top patents by PatentIndex Score
26 records- 0197US9337278B1Gallium nitride on high thermal conductivity material device and methodTRIQUINT SEMICONDUCTOR INC·Filed 2015·Granted May 10, 2016·200 cites·23 claims
- 0289US9202905B1Digital alloy layer in a III-nitrade based heterojunction field effect transistorTRIQUINT SEMICONDUCTOR INC·Filed 2014·Granted Dec 1, 2015·11 cites·20 claims
- 0384US9972708B2Double heterojunction field effect transistor with polarization compensated layerQORVO US INC·Filed 2017·Granted May 15, 2018·4 cites·19 claims
- 0484US9865721B1High electron mobility transistor (HEMT) device and method of making the sameQORVO US INC·Filed 2016·Granted Jan 9, 2018·4 cites·20 claims
- 0582US10749009B1Process of fabricating high efficiency, high linearity N-polar gallium-nitride (GaN) transistorsQORVO US INC·Filed 2019·Granted Aug 18, 2020·3 cites·13 claims
- 0682US10290713B2Field-effect transistorQORVO US INC·Filed 2018·Granted May 14, 2019·3 cites·24 claims
- 0780US12074214B2High electron mobility transistor device having an aluminum-doped buffer layerQORVO US INC·Filed 2021·Granted Aug 27, 2024·1 cites·21 claims
- 0880US10636881B2High electron mobility transistor (HEMT) deviceQORVO US INC·Filed 2016·Granted Apr 28, 2020·3 cites·4 claims
- 0979US9840790B2Highly transparent aluminum nitride single crystalline layers and devices made therefromKOUKITU AKINORI·Filed 2012·Granted Dec 12, 2017·1 cites·9 claims
- 1078US10734512B2High electron mobility transistor (HEMT) deviceQORVO US INC·Filed 2019·Granted Aug 4, 2020·2 cites·20 claims
- 1172US9299883B2Optoelectronic devices incorporating single crystalline aluminum nitride substrateHEXATECH INC·Filed 2014·Granted Mar 29, 2016·3 cites·19 claims
- 1271US9640650B2Doped gallium nitride high-electron mobility transistorTRIQUINT SEMICONDUCTOR INC·Filed 2014·Granted May 2, 2017·2 cites·12 claims
- 1367US2024355917A1High electron mobility transistor device having an aluminum-doped buffer layerQORVO US INC·Filed 2024·Application pending·0 cites
- 1465US10037899B2Semiconductor device with high thermal conductivity substrate and process for making the sameQORVO US INC·Filed 2016·Granted Jul 31, 2018·1 cites·18 claims
- 1560US2023135911A1MOLECULAR BEAM EPITAXY (MBE) REACTORS AND METHODS FOR n+GaN REGROWTHQORVO US INC·Filed 2022·Application pending·0 cites
- 1657US12166118B2High electron mobility transistors (HEMTS) including a yttrium (Y) and aluminum nitride (AIN) (YAIN) alloy layerQORVO US INC·Filed 2022·Granted Dec 10, 2024·0 cites·11 claims
- 1753US2024371992A1Field effect transistor with enhanced buffer and backbarrier regionsQORVO US INC·Filed 2024·Application pending·0 cites
- 1848US10559665B2Field-effect transistorQORVO US INC·Filed 2019·Granted Feb 11, 2020·0 cites·20 claims
- 1948US2023290834A1ENHANCEMENT-MODE GaN HFETQORVO US INC·Filed 2021·Application pending·0 cites
- 2047US10446544B2Enhancement-mode/depletion-mode field-effect transistor GAN technologyQORVO US INC·Filed 2018·Granted Oct 15, 2019·0 cites·24 claims
- 2147US10090172B2Semiconductor device with high thermal conductivity substrate and process for making the sameQORVO US INC·Filed 2016·Granted Oct 2, 2018·0 cites·12 claims
- 2247US9748409B2Power semiconductor devices incorporating single crystalline aluminum nitride substrateHEXATECH INC·Filed 2014·Granted Aug 29, 2017·0 cites·16 claims
- 2346US10177247B2Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfacesQORVO US INC·Filed 2017·Granted Jan 8, 2019·0 cites·21 claims
- 2446US9680062B2Optoelectronic devices incorporating single crystalline aluminum nitride substrateHEXATECH INC·Filed 2016·Granted Jun 13, 2017·0 cites·21 claims
- 2544US2018026144A1Power semiconductor devices incorporating single crystalline aluminum nitride substrateHEXATECH INC·Filed 2017·Application pending·0 cites
- 2639US8008181B2Propagation of misfit dislocations from buffer/Si interface into SiUNIV CALIFORNIA·Filed 2009·Granted Aug 30, 2011·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →