Inventor · disambiguated record
Jinwei Yang
Also filed as: YANG JINWEI
77 granted patents·9 pending applications·665 citations·filing 2001–2023
99Inventor score
Files withSENSOR ELECTRONIC TECH INC67TOKIWA PHYTOCHEMICAL CO LTD11SHATALOV MAXIM S3SHUR MICHAEL3GASKA REMIGIJUS1
Top patents by PatentIndex Score
86 records- 0198US9412901B2Superlattice structureSENSOR ELECTRONIC TECH INC·Filed 2015·Granted Aug 9, 2016·20 cites·20 claims
- 0298US9412902B2Semiconductor structure with stress-reducing buffer structureSENSOR ELECTRONIC TECH INC·Filed 2015·Granted Aug 9, 2016·30 cites·20 claims
- 0398US9385271B2Device with transparent and higher conductive regions in lateral cross section of semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2015·Granted Jul 5, 2016·24 cites·20 claims
- 0498US9331244B2Semiconductor structure with inhomogeneous regionsSENSOR ELECTRONIC TECH INC·Filed 2014·Granted May 3, 2016·29 cites·21 claims
- 0597US9502509B2Stress relieving semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Nov 22, 2016·22 cites·20 claims
- 0697US9397260B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2012·Granted Jul 19, 2016·28 cites·20 claims
- 0797US9330906B2Stress relieving semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2014·Granted May 3, 2016·28 cites·20 claims
- 0897US9287455B2Deep ultraviolet light emitting diodeSENSOR ELECTRONIC TECH INC·Filed 2014·Granted Mar 15, 2016·21 cites·23 claims
- 0997US9281441B2Semiconductor layer including compositional inhomogeneitiesSENSOR ELECTRONIC TECH INC·Filed 2014·Granted Mar 8, 2016·27 cites·21 claims
- 1096US10069034B2Optoelectronic device with modulation dopingSENSOR ELECTRONIC TECH INC·Filed 2017·Granted Sep 4, 2018·12 cites·20 claims
- 1196US9287442B2Semiconductor material dopingSENSOR ELECTRONIC TECH INC·Filed 2013·Granted Mar 15, 2016·25 cites·20 claims
- 1296US9269788B2Ohmic contact to semiconductorSENSOR ELECTRONIC TECH INC·Filed 2013·Granted Feb 23, 2016·20 cites·14 claims
- 1395US9653631B2Optoelectronic device with modulation dopingSENSOR ELECTRONIC TECH INC·Filed 2014·Granted May 16, 2017·13 cites·20 claims
- 1495US9647168B2Optoelectronic device with modulation dopingSENSOR ELECTRONIC TECH INC·Filed 2015·Granted May 9, 2017·11 cites·20 claims
- 1595US9287449B2Ultraviolet reflective rough adhesive contactSENSOR ELECTRONIC TECH INC·Filed 2014·Granted Mar 15, 2016·22 cites·23 claims
- 1695US8981403B2Patterned substrate design for layer growthSHATALOV MAXIM S·Filed 2012·Granted Mar 17, 2015·22 cites·20 claims
- 1795US8791450B2Deep ultraviolet light emitting diodeSENSOR ELECTRONIC TECH INC·Filed 2012·Granted Jul 29, 2014·12 cites·20 claims
- 1894US9368580B2Semiconductor material dopingSHATALOV MAXIM S·Filed 2011·Granted Jun 14, 2016·20 cites·21 claims
- 1994US8787418B2Emitting device with compositional and doping inhomogeneities in semiconductor layersSHUR MICHAEL·Filed 2012·Granted Jul 22, 2014·19 cites·24 claims
- 2094US8633468B2Light emitting device with dislocation bending structureGASKA REMIGIJUS·Filed 2012·Granted Jan 21, 2014·18 cites·27 claims
- 2194US8426225B2Semiconductor material doping based on target valence band discontinuitySHATALOV MAXIM S·Filed 2010·Granted Apr 23, 2013·18 cites·20 claims
- 2293US9806228B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Oct 31, 2017·7 cites·20 claims
- 2393US9660133B2Group III nitride heterostructure for optoelectronic deviceSENSOR ELECTRONIC TECH INC·Filed 2014·Granted May 23, 2017·7 cites·20 claims
- 2493US9105792B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2012·Granted Aug 11, 2015·11 cites·21 claims
- 2593US6878593B2Metal oxide semiconductor heterostructure field effect transistorSENSOR ELECTRONIC TECH INC·Filed 2003·Granted Apr 12, 2005·66 cites·22 claims
- 2691US9691939B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2015·Granted Jun 27, 2017·6 cites·20 claims
- 2790US9653313B2Stress relieving semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2016·Granted May 16, 2017·5 cites·20 claims
- 2890US9595634B2Device with transparent and higher conductive regions in lateral cross section of semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Mar 14, 2017·5 cites·20 claims
- 2990US9324560B2Patterned substrate design for layer growthSENSOR ELECTRONIC TECH INC·Filed 2015·Granted Apr 26, 2016·5 cites·20 claims
- 3088US9818826B2Heterostructure including a composite semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2014·Granted Nov 14, 2017·7 cites·20 claims
- 3187US9705032B2Deep ultraviolet light emitting diodeSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Jul 11, 2017·4 cites·20 claims
- 3285US10535793B2Group III nitride heterostructure for optoelectronic deviceSENSOR ELECTRONIC TECH INC·Filed 2017·Granted Jan 14, 2020·3 cites·18 claims
- 3385US9634189B2Patterned substrate design for layer growthSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Apr 25, 2017·3 cites·20 claims
- 3485US8698127B2Superlattice structure and method for making the sameSHUR MICHAEL·Filed 2011·Granted Apr 15, 2014·7 cites·24 claims
- 3585US6764888B2Method of producing nitride-based heterostructure devicesSENSOR ELECTRONIC TECH INC·Filed 2001·Granted Jul 20, 2004·28 cites·11 claims
- 3684US9406840B2Semiconductor layer including compositional inhomogeneitiesSENSOR ELECTRONIC TECH INC·Filed 2015·Granted Aug 2, 2016·4 cites·20 claims
- 3783US10158044B2Epitaxy technique for growing semiconductor compoundsSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Dec 18, 2018·3 cites·20 claims
- 3883US9831382B2Epitaxy technique for growing semiconductor compoundsSENSOR ELECTRONIC TECH INC·Filed 2012·Granted Nov 28, 2017·5 cites·23 claims
- 3983US8879598B2Emitting device with compositional and doping inhomogeneities in semiconductor layersSENSOR ELECTRONIC TECH INC·Filed 2014·Granted Nov 4, 2014·4 cites·24 claims
- 4080US9768357B2Ultraviolet reflective rough adhesive contactSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Sep 19, 2017·3 cites·20 claims
- 4179US10622515B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2018·Granted Apr 14, 2020·2 cites·20 claims
- 4279US9997667B2Semiconductor material dopingSENSOR ELECTRONIC TECH INC·Filed 2017·Granted Jun 12, 2018·2 cites·20 claims
- 4379US9562171B2Ultraviolet device encapsulantSENSOR ELECTRONIC TECH INC·Filed 2012·Granted Feb 7, 2017·3 cites·16 claims
- 4478US9722139B2Non-uniform multiple quantum well structureSENSOR ELECTRONIC TECH INC·Filed 2013·Granted Aug 1, 2017·3 cites·20 claims
- 4577US9634183B2Semiconductor material dopingSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Apr 25, 2017·2 cites·20 claims
- 4677US8993996B2Superlattice structureSENSOR ELECTRONIC TECH INC·Filed 2013·Granted Mar 31, 2015·2 cites·20 claims
- 4777US7348606B2Nitride-based heterostructure devicesSENSOR ELECTRONIC TECH INC·Filed 2004·Granted Mar 25, 2008·16 cites·9 claims
- 4874US9042420B2Device with transparent and higher conductive regions in lateral cross section of semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2014·Granted May 26, 2015·2 cites·23 claims
- 4974US2022354914A1Method for improving sleep onset and sleep maintenance, method for reducing stress and improving relaxation, method for improving performance and concentration, and method for improving resting effect and promoting recovery from fatigueTOKIWA PHYTOCHEMICAL CO LTD·Filed 2022·Application pending·0 cites
- 5073US10460952B2Stress relieving semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2018·Granted Oct 29, 2019·1 cites·20 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →