Inventor · disambiguated record
Jinsong Yin
Also filed as: YIN JINSONG
14 granted patents·346 citations·filing 2003–2006
94Inventor score
Top patents by PatentIndex Score
14 records- 0193US6830998B1Gate dielectric quality for replacement metal gate transistorsADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 14, 2004·75 cites·9 claims
- 0293US6727560B1Engineered metal gate electrodeADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 27, 2004·64 cites·9 claims
- 0391US8039391B1Method of forming a contact in a semiconductor device with engineered plasma treatment profile of barrier metal layerSPANSION LLC·Filed 2006·Granted Oct 18, 2011·23 cites·5 claims
- 0486US7335594B1Method for manufacturing a memory device having a nanocrystal charge storage regionSPANSION LLC·Filed 2005·Granted Feb 26, 2008·13 cites·19 claims
- 0586US7033888B2Engineered metal gate electrodeADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 25, 2006·33 cites·11 claims
- 0685US7060571B1Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxynitride gate dielectricADVANCED MICRO DEVICES INC·Filed 2004·Granted Jun 13, 2006·35 cites·18 claims
- 0784US7071086B2Method of forming a metal gate structure with tuning of work function by silicon incorporationADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 4, 2006·32 cites·14 claims
- 0883US6861350B1Method of manufacturing semiconductor device comprising silicon-rich tasin metal gate electrodeADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 1, 2005·32 cites·20 claims
- 0979US9202758B1Method for manufacturing a contact for a semiconductor component and related structureBESSER PAUL R·Filed 2005·Granted Dec 1, 2015·9 cites·9 claims
- 1073US6893910B1One step deposition method for high-k dielectric and metal gate electrodeADVANCED MICRO DEVICES INC·Filed 2003·Granted May 17, 2005·15 cites·18 claims
- 1167US7476604B1Aggressive cleaning process for semiconductor device contact formationADVANCED MICRO DEVICES INC·Filed 2005·Granted Jan 13, 2009·3 cites·8 claims
- 1267US7217660B1Method for manufacturing a semiconductor component that inhibits formation of wormholesADVANCED MICRO DEVICES INC·Filed 2005·Granted May 15, 2007·2 cites·4 claims
- 1355US6927162B1Method of forming a contact in a semiconductor device with formation of silicide prior to plasma treatmentADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 9, 2005·7 cites·19 claims
- 1446US7407882B1Semiconductor component having a contact structure and method of manufactureSPANSION LLC·Filed 2004·Granted Aug 5, 2008·3 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →