Inventor · disambiguated record

Ji-Feng Ying

Also filed as: YING JI-FENG

42 granted patents·9 pending applications·465 citations·filing 2000–2025

97Inventor score

Technology areasH01F H10P G11B G11C H10N

Files withTAIWAN SEMICONDUCTOR MFG CO LTD43 WESTERN DIGITAL FREMONT LLC4 WESTERN DIGITAL TECH INC2 MARVELL INT LTD1 MAXTOR CORP1

Top patents by PatentIndex Score

51 records

0197US11672185B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
0297US11088201B2Magnetic tunneling junction (MTJ) element with an amorphous buffer layer and its fabrication processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·9 cites·20 claims
0397US7719795B2Head having a transducer heater and an air bearing surface with a flow-diversion dam and pressure-relief trough disposed upstream of the transducerWESTERN DIGITAL FREMONT LLC·Filed 2006·Granted May 18, 2010·166 cites·6 claims
0496US11165012B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·5 cites·20 claims
0595US11842757B2Crystal seed layer for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
0695US11659718B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
0795US10753990B2Method and apparatus for measuring magnetic field strengthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·5 cites·19 claims
0895US10541269B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 21, 2020·5 cites·18 claims
0995US7616405B2Slider with an air bearing surface having a inter-cavity dam with OD and ID dam surfaces of different heightsWESTERN DIGITAL FREMONT LLC·Filed 2006·Granted Nov 10, 2009·51 cites·16 claims
1095US7477486B1Air bearing slider with a side pad having a shallow recess depthWESTERN DIGITAL FREMONT LLC·Filed 2005·Granted Jan 13, 2009·48 cites·11 claims
1195US7289299B1Air bearing slider with three-projection trailing center padWESTERN DIGITAL FREMONT LLC·Filed 2005·Granted Oct 30, 2007·46 cites·11 claims
1294US11289538B2Memory device and semiconductor die, and method of fabricating memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·3 cites·20 claims
1394US7019945B1Air bearing slider including pressurized side pads with forward and trailing shallow etched surfacesWESTERN DIGITAL TECH INC·Filed 2002·Granted Mar 28, 2006·56 cites·30 claims
1493US6912103B1Method of operating a disk drive with a slider at loading and unloading fly heights greater than an operational fly heightWESTERN DIGITAL TECH INC·Filed 2002·Granted Jun 28, 2005·41 cites·13 claims
1591US2024373649A1Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1690US12382841B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
1790US2025331429A1Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1888US12075631B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
1988US12035636B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
2088US10727401B2Magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·3 cites·20 claims
2186US10916286B2Assisted write method for MRAM testing and field applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·3 cites·20 claims
2286US10672832B2Magnetic detection circuit, MRAM and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·4 cites·20 claims
2385US2025342874A1Crystal seed layer for magnetic random access memory (mram)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2484US12424255B2Crystal seed layer for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
2584US12302587B2Memory device and semiconductor die, and method of fabricating memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
2683US11527275B2Crystal seed layer for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 13, 2022·1 cites·20 claims
2783US2024365683A1Methods of manufacturing magnetic random access memory, and methods of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2882US2025248049A1Memory device and semiconductor die, and method of fabricating memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2981US10685693B2Method for writing to magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 16, 2020·3 cites·20 claims
3080US12082511B2Magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
3180US11238911B2Method for writing to magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·1 cites·20 claims
3280US2024324244A1Memory cell with a buffer layer and its fabrication processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3380US2023358829A1Method and apparatus for measuring magnetic field strengthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3477US12300293B2Method for writing to magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
3577US10883820B2Apparatus and method for metrologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 5, 2021·2 cites·19 claims
3676US11825664B2Memory device and semiconductor die, and method of fabricating memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·0 cites·20 claims
3774US12029046B2Magnetic tunneling junction (MTJ) element with an amorphous buffer layer and its fabrication processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 2, 2024·0 cites·20 claims
3874US11004901B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·0 cites·20 claims
3972US11762046B2Method and apparatus for measuring magnetic field strengthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·0 cites·20 claims
4072US11374169B2Magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
4171US11727974B2Method for writing to magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
4269US10403385B2Apparatus for memory device testing and field applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 3, 2019·2 cites·20 claims
4363US11525668B2Apparatus and method for metrologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
4463US11244714B2Assisted write method for magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 8, 2022·0 cites·20 claims
4563US6423431B1Magnetic recording media having improved magnetic and parametric performance with chromium alloy underlayer having added aluminumMAXTOR CORP·Filed 2000·Granted Jul 23, 2002·5 cites·32 claims
4660US10868079B2Magnetic detection circuit, MRAM and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 15, 2020·0 cites·20 claims
4758US2025300149A13dic packaging with efficient heat dissipationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4854US2025006659A1Methods and structure for reduced warpage and improved acoustic scanningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4948US10861574B2Apparatus for memory device testing and field applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·21 claims
5044US10510410B2Method for programming resistive memory cell with AC perturbation AC signal and nonvolatile memory device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims

Showing the top 50 of 51 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →