Inventor · disambiguated record
Jong Hyuk Ahn
Also filed as: AHN JONG HYUK
1 granted patent·1 pending application·0 citations·filing 2023–2024
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2 records- 0163US2025248019A1Capacitor-less stacked dram cell based on vertical transistorUIF UNIV INDUSTRY FOUNDATION YONSEI UNIV·Filed 2024·Application pending·0 cites
- 0254US12471321B2Oxide thin film transistor including photocatalyst layer and method for manufacturing the sameUIF UNIV INDUSTRY FOUNDATION YONSEI UNIV·Filed 2023·Granted Nov 11, 2025·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →