Inventor · disambiguated record
John Batey
Also filed as: BATEY JOHN · BATEY JOHN WALTER
17 granted patents·585 citations·filing 1976–2010
96Inventor score
Top patents by PatentIndex Score
17 records- 0197US7704772B2Method of manufacture for microelectromechanical devicesQUALCOMM MEMS TECHNOLOGIES INC·Filed 2008·Granted Apr 27, 2010·41 cites·17 claims
- 0296US7476327B2Method of manufacture for microelectromechanical devicesIDC LLC·Filed 2004·Granted Jan 13, 2009·96 cites·14 claims
- 0392US7781850B2Controlling electromechanical behavior of structures within a microelectromechanical systems deviceQUALCOMM MEMS TECHNOLOGIES INC·Filed 2005·Granted Aug 24, 2010·24 cites·11 claims
- 0491US7550794B2Micromechanical systems device comprising a displaceable electrode and a charge-trapping layerIDC LLC·Filed 2002·Granted Jun 23, 2009·55 cites·13 claims
- 0588US8278726B2Controlling electromechanical behavior of structures within a microelectromechanical systems deviceMILES MARK W·Filed 2010·Granted Oct 2, 2012·8 cites·31 claims
- 0686US6420282B1Passivation of copper with ammonia-free silicon nitride and application to TFT/LCDIBM·Filed 2000·Granted Jul 16, 2002·28 cites·19 claims
- 0785US7580172B2MEMS device and interconnects for sameQUALCOMM MEMS TECHNOLOGIES INC·Filed 2006·Granted Aug 25, 2009·14 cites·47 claims
- 0884US5242530APulsed gas plasma-enhanced chemical vapor deposition of siliconIBM·Filed 1991·Granted Sep 7, 1993·106 cites·13 claims
- 0984US5068124AMethod for depositing high quality silicon dioxide by pecvdIBM·Filed 1989·Granted Nov 26, 1991·58 cites·20 claims
- 1081US8368124B2Electromechanical devices having etch barrier layersQUALCOMM MEMS TECHNOLOGIES INC·Filed 2009·Granted Feb 5, 2013·7 cites·18 claims
- 1173US4110590AInert gas weldingREYROLLE PARSONS LTD·Filed 1976·Granted Aug 29, 1978·25 cites·12 claims
- 1271US5831283APassivation of copper with ammonia-free silicon nitride and application to TFT/LCDIBM·Filed 1996·Granted Nov 3, 1998·28 cites·13 claims
- 1370US4998152AThin film transistorIBM·Filed 1990·Granted Mar 5, 1991·30 cites·20 claims
- 1469US6165917APassivation of copper with ammonia-free silicon nitride and application to TFT/LCDIBM·Filed 1997·Granted Dec 26, 2000·25 cites·11 claims
- 1562US6545295B2Transistor having ammonia free nitride between its gate electrode and gate insulation layersIBM·Filed 2002·Granted Apr 8, 2003·5 cites·7 claims
- 1658US5086321AUnpinned oxide-compound semiconductor structures and method of forming sameIBM·Filed 1990·Granted Feb 4, 1992·28 cites·30 claims
- 1740US4987095AMethod of making unpinned oxide-compound semiconductor structuresIBM·Filed 1988·Granted Jan 22, 1991·7 cites·37 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →