Inventor · disambiguated record
Josef Bock
Also filed as: BOCK JOSEF · BOECK JOSEF
15 granted patents·144 citations·filing 1989–2011
92Inventor score
Top patents by PatentIndex Score
15 records- 0188US7449389B2Method for fabricating a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2006·Granted Nov 11, 2008·16 cites·16 claims
- 0288US4927479AProcess and plant for pressing flexible sheetsBOECK JOSEF·Filed 1989·Granted May 22, 1990·67 cites·10 claims
- 0379US7719088B2High-frequency bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 18, 2010·7 cites·12 claims
- 0479US7420228B2Bipolar transistor comprising carbon-doped semiconductorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 2, 2008·8 cites·2 claims
- 0579US7105415B2Method for the production of a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 12, 2006·8 cites·10 claims
- 0675US7285470B2Method for the production of a bipolar semiconductor component, especially a bipolar transistor, and corresponding bipolar semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 23, 2007·6 cites·5 claims
- 0772US8102052B2Process for the simultaneous deposition of crystalline and amorphous layers with dopingSCHAEFER HERBERT·Filed 2011·Granted Jan 24, 2012·2 cites·1 claims
- 0870US7947552B2Process for the simultaneous deposition of crystalline and amorphous layers with dopingINFINEON TECHNOLOGIES AG·Filed 2008·Granted May 24, 2011·2 cites·19 claims
- 0968US8003475B2Method for fabricating a transistor structureINFINEON TECHNOLOGIES AG·Filed 2008·Granted Aug 23, 2011·2 cites·10 claims
- 1068US7968972B2High-frequency bipolar transistor and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2010·Granted Jun 28, 2011·2 cites·8 claims
- 1166US6635545B2Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 21, 2003·13 cites·10 claims
- 1262US7371650B2Method for producing a transistor structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 13, 2008·7 cites·7 claims
- 1350US7018884B2Method for a parallel production of an MOS transistor and a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 28, 2006·4 cites·16 claims
- 1437US6716712B2Process for producing two differently doped adjacent regions in an integrated semiconductorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 6, 2004·0 cites·12 claims
- 1533US7256472B2Bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 14, 2007·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →