Inventor · disambiguated record
Joseph A. Calviello
Also filed as: CALVIELLO JOSEPH A
32 granted patents·891 citations·filing 1976–1994
98Inventor score
Top patents by PatentIndex Score
32 records- 0192US5159413AMonolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrateEATON CORP·Filed 1990·Granted Oct 27, 1992·155 cites·11 claims
- 0290US5356831AMethod of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrateEATON CORP·Filed 1992·Granted Oct 18, 1994·117 cites·6 claims
- 0383US5164359AMonolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrateEATON CORP·Filed 1990·Granted Nov 17, 1992·78 cites·10 claims
- 0483US4789645AMethod for fabrication of monolithic integrated circuitsEATON CORP·Filed 1987·Granted Dec 6, 1988·53 cites·39 claims
- 0579US5341114AIntegrated limiter and amplifying devicesAIL SYSTEMS INC·Filed 1990·Granted Aug 23, 1994·41 cites·12 claims
- 0676US4620207AEdge channel FETEATON CORP·Filed 1984·Granted Oct 28, 1986·27 cites·13 claims
- 0773US4701996AMethod for fabricating edge channel FETCALVIELLO JOSEPH A·Filed 1986·Granted Oct 27, 1987·34 cites·3 claims
- 0873US4098921ATantalum-gallium arsenide schottky barrier semiconductor deviceCUTLER HAMMER INC·Filed 1976·Granted Jul 4, 1978·26 cites·5 claims
- 0972US4312113AMethod of making field-effect transistors with micron and submicron gate lengthsEATON CORP·Filed 1979·Granted Jan 26, 1982·24 cites·1 claims
- 1072US4075650AMillimeter wave semiconductor deviceCUTLER HAMMER INC·Filed 1976·Granted Feb 21, 1978·27 cites·6 claims
- 1170US4692997AMethod for fabricating MOMOM tunnel emission transistorEATON CORP·Filed 1986·Granted Sep 15, 1987·26 cites·2 claims
- 1270US4624004ABuried channel MESFET with backside source contactEATON CORP·Filed 1985·Granted Nov 18, 1986·28 cites·8 claims
- 1366US4301233ABeam lead Schottky barrier diode for operation at millimeter and submillimeter wave frequenciesEATON CORP·Filed 1980·Granted Nov 17, 1981·19 cites·3 claims
- 1463US5445985AMethod of forming integrated limiter and amplifying devicesAIL SYSTEMS INC·Filed 1994·Granted Aug 29, 1995·20 cites·30 claims
- 1562US4935789ABuried channel FET with lateral growth over amorphous regionEATON CORP·Filed 1989·Granted Jun 19, 1990·20 cites·3 claims
- 1658US4876176AMethod for fabricating quasi-monolithic integrated circuitsEATON CORP·Filed 1987·Granted Oct 24, 1989·19 cites·9 claims
- 1758US4312112AMethod of making field-effect transistors with micron and submicron gate lengthsEATON CORP·Filed 1979·Granted Jan 26, 1982·10 cites·3 claims
- 1857US4630081AMOMOM tunnel emission transistorEATON CORP·Filed 1984·Granted Dec 16, 1986·13 cites·15 claims
- 1956US4601096AMethod for fabricating buried channel field effect transistor for microwave and millimeter frequencies utilizing molecular beam epitaxyEATON CORP·Filed 1985·Granted Jul 22, 1986·21 cites·1 claims
- 2056US4549194ALight sensitive detectorEATON CORP·Filed 1982·Granted Oct 22, 1985·16 cites·5 claims
- 2155US4923827AT-type undercut electrical contact process on a semiconductor substrateEATON CORP·Filed 1988·Granted May 8, 1990·16 cites·8 claims
- 2253US4310570AField-effect transistors with micron and submicron gate lengthsEATON CORP·Filed 1980·Granted Jan 12, 1982·17 cites·1 claims
- 2352US4674177AMethod for making an edge junction schottky diodeEATON CORP·Filed 1986·Granted Jun 23, 1987·13 cites·7 claims
- 2450US4935805AT-type undercut electrical contact on a semiconductor substrateEATON CORP·Filed 1989·Granted Jun 19, 1990·13 cites·7 claims
- 2549US4665413AEdge junction schottky diodeEATON CORP·Filed 1986·Granted May 12, 1987·12 cites·12 claims
- 2645US4683642AMethod for fabricating MOMS semiconductor deviceEATON CORP·Filed 1986·Granted Aug 4, 1987·8 cites·5 claims
- 2739US5010036ALow temperature semiconductor bonding process with chemical vapor reactionEATON CORP·Filed 1990·Granted Apr 23, 1991·11 cites·10 claims
- 2839US4724220AMethod for fabricating buried channel field-effect transistor for microwave and millimeter frequenciesEATON CORP·Filed 1986·Granted Feb 9, 1988·9 cites·1 claims
- 2939US4631560AMOMS tunnel emission transistorEATON CORP·Filed 1984·Granted Dec 23, 1986·4 cites·18 claims
- 3034US5138406AIon implantation masking method and devicesEATON CORP·Filed 1990·Granted Aug 11, 1992·7 cites·2 claims
- 3133US5030579AMethod of making an FET by ion implantation through a partially opaque implant maskEATON CORP·Filed 1989·Granted Jul 9, 1991·4 cites·11 claims
- 3231US4837175AMaking a buried channel FET with lateral growth over amorphous regionEATON CORP·Filed 1988·Granted Jun 6, 1989·3 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →