Inventor · disambiguated record
Jonathan Tsung-Yung Chang
Also filed as: CHANG JONATHAN TSUNG-YUNG
112 granted patents·26 pending applications·522 citations·filing 2011–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD123TAIWAN SEMICONDUCTOR MFG6CHANG JONATHAN TSUNG-YUNG3CHEN YEN-HUEI2CHENG CHITING1
Top patents by PatentIndex Score
138 records- 0198US8630132B2SRAM read and write assist apparatusCHENG CHITING·Filed 2011·Granted Jan 14, 2014·187 cites·20 claims
- 0297US11423974B2Method of forming semiconductor device including distributed write driving arrangementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 23, 2022·4 cites·20 claims
- 0397US10991420B2Semiconductor device including distributed write driving arrangement and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 27, 2021·4 cites·20 claims
- 0496US12051466B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·2 cites·20 claims
- 0596US11854943B2Memory macro including through-silicon viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·2 cites·20 claims
- 0696US11783890B2Semiconductor device including distributed write driving arrangementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
- 0795US9183341B2Pre-colored methodology of multiple patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 10, 2015·24 cites·20 claims
- 0895US9070432B2Negative bitline boost scheme for SRAM write-assistTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 30, 2015·27 cites·21 claims
- 0994US11646079B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·4 cites·13 claims
- 1094US11562946B2Memory macro including through-silicon viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·3 cites·20 claims
- 1194US9824729B2Memory macro and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 21, 2017·11 cites·20 claims
- 1294US9437281B2Negative bitline boost scheme for SRAM write-assistTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 6, 2016·20 cites·20 claims
- 1393US11901035B2Method of differentiated thermal throttling of memory and system thereforTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 1492US10803928B2Low voltage memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·10 cites·20 claims
- 1591US11763882B2Low voltage memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·1 cites·20 claims
- 1691US10503421B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·6 cites·20 claims
- 1791US9680012B1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·7 cites·20 claims
- 1891US8958232B2Method and apparatus for read assist to compensate for weak bitCHANG JONATHAN TSUNG-YUNG·Filed 2012·Granted Feb 17, 2015·13 cites·20 claims
- 1990US11301148B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 12, 2022·2 cites·20 claims
- 2090US10755768B2Semiconductor device including distributed write driving arrangement and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·4 cites·20 claims
- 2190US9324413B2Write assist circuit, memory device and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 26, 2016·14 cites·20 claims
- 2290US8848461B2Memory cell having flexible read/write assist and method of usingCHANG JONATHAN TSUNG-YUNG·Filed 2012·Granted Sep 30, 2014·11 cites·20 claims
- 2389US10839894B2Memory computation circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·5 cites·18 claims
- 2489US10553275B2Device having write assist circuit including memory-adapted transistors and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·3 cites·20 claims
- 2589US8601411B2Pre-colored methodology of multiple patterningCHEN YEN-HUEI·Filed 2012·Granted Dec 3, 2013·11 cites·20 claims
- 2688US12068023B2Memory circuits, memory structures, and methods for fabricating a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·1 cites·20 claims
- 2788US11404114B2Low voltage memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
- 2888US9842627B2Memory device with strap cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 12, 2017·5 cites·20 claims
- 2988US9281031B2Method and apparatus for read assist to compensate for weak bitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 8, 2016·8 cites·20 claims
- 3088US9064550B2Method and apparatus for word line suppressionCHANG JONATHAN TSUNG-YUNG·Filed 2011·Granted Jun 23, 2015·13 cites·21 claims
- 3188US2025362871A1In-memory computation circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3287US11031055B2Memory macro and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·2 cites·20 claims
- 3387US9601162B1Memory devices with strap cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 21, 2017·5 cites·20 claims
- 3487US2025364047A1Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3586US12424279B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·19 claims
- 3686US11693560B2SRAM-based cell for in-memory computing and hybrid computations/storage memory architectureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·2 cites·20 claims
- 3786US10319421B2Memory macro and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 11, 2019·4 cites·20 claims
- 3886US10204660B2Memory device with strap cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 12, 2019·4 cites·20 claims
- 3986US9865605B2Memory circuit having resistive device coupled with supply voltage lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·4 cites·20 claims
- 4085US12426517B2Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 4185US12412621B2Semiconductor device including distributed write driving arrangementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 4285US11651804B2Memory macro and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·1 cites·20 claims
- 4385US10847214B2Low voltage bit-cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·5 cites·20 claims
- 4485US9997219B2Memory macro and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 12, 2018·4 cites·20 claims
- 4585US8559251B2Memory circuit and method of writing datum to memory circuitLIN CHIH-YU·Filed 2012·Granted Oct 15, 2013·11 cites·20 claims
- 4684US12087354B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·1 cites·20 claims
- 4784US10541007B2Memory device with strap cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 21, 2020·3 cites·20 claims
- 4884US9305635B2High density memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 5, 2016·9 cites·20 claims
- 4984US9075936B2Pre-colored methodology of multiple patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 7, 2015·6 cites·18 claims
- 5083US12308303B2Integrated circuit die with memory macro including through-silicon via and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
Showing the top 50 of 138 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →