Inventor · disambiguated record
Joon Yeon Chang
Also filed as: CHANG JOON YEON
17 granted patents·1 pending application·93 citations·filing 2003–2018
92Inventor score
Top patents by PatentIndex Score
18 records- 0188US7839675B2Magnetic memory device and method for reading magnetic memory cell using spin hall effectKOREA INST SCI & TECH·Filed 2009·Granted Nov 23, 2010·16 cites·17 claims
- 0288US7608901B2Spin transistor using stray magnetic fieldKOREA INST SCI & TECH·Filed 2007·Granted Oct 27, 2009·19 cites·21 claims
- 0383US8125247B2Complementary spin transistor logic circuitKOO HYUN CHEOL·Filed 2010·Granted Feb 28, 2012·9 cites·19 claims
- 0482US9331266B2Magnetic field controlled reconfigurable semiconductor logic device and method for controlling the sameKOREA INST SCI & TECH·Filed 2013·Granted May 3, 2016·4 cites·27 claims
- 0581US7307299B2Spin transistor using spin-orbit coupling induced magnetic fieldKOREA INST SCI & TECH·Filed 2005·Granted Dec 11, 2007·12 cites·17 claims
- 0679US7994555B2Spin transistor using perpendicular magnetizationKOREA INST SCI & TECH·Filed 2007·Granted Aug 9, 2011·9 cites·13 claims
- 0772US8421060B2Reconfigurable logic device using spin accumulation and diffusionKOO HYUN CHEOL·Filed 2010·Granted Apr 16, 2013·5 cites·16 claims
- 0869US8058676B2Spin transistor using double carrier supply layer structureKIM HYUNG JUN·Filed 2008·Granted Nov 15, 2011·4 cites·10 claims
- 0967US7675103B2Spin transistor using ferromagnetKOREA INST SCI & TECH·Filed 2006·Granted Mar 9, 2010·4 cites·16 claims
- 1066US8587044B2Complementary logic device using spin injectionKOREA INST SCI & TECH·Filed 2012·Granted Nov 19, 2013·2 cites·13 claims
- 1166US8053851B2Spin transistor using epitaxial ferromagnet-semiconductor junctionKOREA INST SCI & TECH·Filed 2008·Granted Nov 8, 2011·3 cites·13 claims
- 1247US7095070B2Method for fabricating Bi thin film and device using the sameKOREA INST SCI & TECH·Filed 2004·Granted Aug 22, 2006·3 cites·14 claims
- 1346US7084468B2Hybrid ferromagnet/semiconductor spin device and fabrication method therofKOREA INST SCI & TECH·Filed 2004·Granted Aug 1, 2006·3 cites·10 claims
- 1443US9099328B2Complementary spin device having a gate, a source, a first and second drain electrodeKOREA INST SCI & TECH·Filed 2013·Granted Aug 4, 2015·0 cites·17 claims
- 1543US7063986B2Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based deviceKOREA INST SCI & TECH·Filed 2004·Granted Jun 20, 2006·0 cites·4 claims
- 1642US10014396B2Spin control electronic device operable at room temperatureKOREA INST SCI & TECH·Filed 2017·Granted Jul 3, 2018·0 cites·15 claims
- 1740US2004041217A1Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based deviceKOREA INST SCI & TECH·Filed 2003·Application pending·0 cites
- 1834US10622490B2Reconfigurable logic device using electrochemical potentialKOREA INST SCI & TECH·Filed 2018·Granted Apr 14, 2020·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →