Inventor · disambiguated record
Jon D. Cheek
Also filed as: CHEEK JON · CHEEK JON D
67 granted patents·3 pending applications·1,538 citations·filing 1996–2015
99Inventor score
Top patents by PatentIndex Score
70 records- 0197US7238990B2Interlayer dielectric under stress for an integrated circuitFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 3, 2007·39 cites·15 claims
- 0296US6346426B1Method and apparatus for characterizing semiconductor device performance variations based on independent critical dimension measurementsADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 12, 2002·110 cites·41 claims
- 0395US7410876B1Methodology to reduce SOI floating-body effectFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 12, 2008·31 cites·19 claims
- 0493US6506642B1Removable spacer techniqueADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 14, 2003·74 cites·19 claims
- 0592US6316302B1Isotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implantADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 13, 2001·57 cites·21 claims
- 0690US9276008B2Embedded NVM in a HKMG processFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Mar 1, 2016·6 cites·10 claims
- 0789US6191446B1Formation and control of a vertically oriented transistor channel lengthADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 20, 2001·80 cites·15 claims
- 0887US6372587B1Angled halo implant tailoring using implant maskADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 16, 2002·39 cites·20 claims
- 0986US6833307B1Method for manufacturing a semiconductor component having an early halo implantADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 21, 2004·38 cites·10 claims
- 1085US6114211ASemiconductor device with vertical halo region and methods of manufactureADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 5, 2000·62 cites·21 claims
- 1184US6787464B1Method of forming silicide layers over a plurality of semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 7, 2004·32 cites·13 claims
- 1283US6300205B1Method of making a semiconductor device with self-aligned active, lightly-doped drain, and halo regionsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 9, 2001·67 cites·23 claims
- 1383US5866934AParallel and series-coupled transistors having gate conductors formed on sidewall surfaces of a sacrificial structureADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 2, 1999·45 cites·12 claims
- 1482US9054220B2Embedded NVM in a HKMG processFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Jun 9, 2015·5 cites·10 claims
- 1581US6541321B1Method of making transistors with gate insulation layers of differing thicknessADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 1, 2003·28 cites·20 claims
- 1681US6037629ATrench transistor and isolation trenchADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 14, 2000·53 cites·41 claims
- 1779US6124610AIsotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implantADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 26, 2000·37 cites·16 claims
- 1879US5852310AMulti-level transistor fabrication method with a patterned upper transistor substrate and interconnection theretoADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 22, 1998·48 cites·9 claims
- 1976US6426262B1Method of analyzing the effects of shadowing of angled halo implantsADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 30, 2002·18 cites·24 claims
- 2076US6261885B1Method for forming integrated circuit gate conductors from dual layers of polysiliconADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 17, 2001·18 cites·15 claims
- 2176US6104077ASemiconductor device having gate electrode with a sidewall air gapADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 15, 2000·46 cites·31 claims
- 2275US7208383B1Method of manufacturing a semiconductor componentADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 24, 2007·19 cites·20 claims
- 2375US5780340AMethod of forming trench transistor and isolation trenchADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 14, 1998·40 cites·25 claims
- 2472US7091106B2Method of reducing STI divot formation during semiconductor device fabricationADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 15, 2006·18 cites·7 claims
- 2571US6018180ATransistor formation with LI overetch immunityADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 25, 2000·34 cites·14 claims
- 2669US7179745B1Method for offsetting a silicide process from a gate electrode of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 20, 2007·14 cites·18 claims
- 2769US6580122B1Transistor device having an enhanced width dimension and a method of making sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 17, 2003·7 cites·34 claims
- 2869US5994193AMethod of making high performance MOSFET with integrated poly/metal gate electrodeADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 30, 1999·24 cites·14 claims
- 2968US7235433B2Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2004·Granted Jun 26, 2007·13 cites·14 claims
- 3068US6403979B1Test structure for measuring effective channel length of a transistorADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 11, 2002·11 cites·30 claims
- 3168US6130454AGate conductor formed within a trench bounded by slanted sidewallsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 10, 2000·27 cites·14 claims
- 3267US5981365AStacked poly-oxide-poly gate for improved silicide formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 9, 1999·26 cites·23 claims
- 3366US6225201B1Ultra short transistor channel length dictated by the width of a sidewall spacerADVANCED MICRO DEVICES INC·Filed 1999·Granted May 1, 2001·24 cites·23 claims
- 3466US6118163ATransistor with integrated poly/metal gate electrodeADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 12, 2000·21 cites·17 claims
- 3564US7422956B2Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layersADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 9, 2008·10 cites·12 claims
- 3664US7253484B2Low-power multiple-channel fully depleted quantum well CMOSFETsADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 7, 2007·2 cites·12 claims
- 3763US5986283ATest structure for determining how lithographic patterning of a gate conductor affects transistor propertiesADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 16, 1999·27 cites·13 claims
- 3861US5893739AAsymmetrical P-channel transistor having a boron migration barrier and a selectively formed sidewall spacerADVANCED MICRO DEVICES INC·Filed 1996·Granted Apr 13, 1999·20 cites·13 claims
- 3960US6162694AMethod of forming a metal gate electrode using replaced polysilicon structureADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 19, 2000·19 cites·20 claims
- 4060US5977600AFormation of shortage protection regionADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 2, 1999·19 cites·13 claims
- 4159US6399493B1Method of silicide formation by silicon pretreatmentADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 4, 2002·8 cites·22 claims
- 4259US6383872B1Parallel and series-coupled transistors having gate conductors formed on sidewall surfaces of a sacrificial structureADVANCED MICRO DEVICES INC·Filed 1998·Granted May 7, 2002·16 cites·18 claims
- 4356US6406964B1Method of controlling junction recesses in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 18, 2002·5 cites·40 claims
- 4456US6180475B1Transistor formation with local interconnect overetch immunityADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 30, 2001·18 cites·11 claims
- 4556US6075417ARing oscillator test structureADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 13, 2000·19 cites·19 claims
- 4655US7074657B2Low-power multiple-channel fully depleted quantum well CMOSFETsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 11, 2006·5 cites·6 claims
- 4755US6720227B1Method of forming source/drain regions in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 13, 2004·4 cites·34 claims
- 4855US6638829B1Semiconductor structure having a metal gate electrode and elevated salicided source/drain regions and a method for manufactureADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 28, 2003·15 cites·8 claims
- 4955US6261936B1Poly gate CD passivation for metrology controlADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 17, 2001·4 cites·20 claims
- 5055US6110786ASemiconductor device having elevated gate electrode and elevated active regions and method of manufacture thereofADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 29, 2000·19 cites·22 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →