Inventor · disambiguated record
Jong Chen
Also filed as: CHEN JONG · CHEN JONG-YIH
25 granted patents·3 pending applications·1,107 citations·filing 1997–2001
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG26
Top patents by PatentIndex Score
28 records- 0196US6074915AMethod of making embedded flash memory with salicide and sac structureTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 13, 2000·146 cites·47 claims
- 0294US6013551AMethod of manufacture of self-aligned floating gate, flash memory cell and device manufactured therebyTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 11, 2000·98 cites·15 claims
- 0392US6133096AProcess for simultaneously fabricating a stack gate flash memory cell and salicided periphereral devicesFiled 1998·Granted Oct 17, 2000·97 cites·29 claims
- 0491US6127227AThin ONO thickness control and gradual gate oxidation suppression by b. N.su2 treatment in flash memoryTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 3, 2000·97 cites·36 claims
- 0589US6037223AStack gate flash memory cell featuring symmetric self aligned contact structuresTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 14, 2000·68 cites·30 claims
- 0687US6124177AMethod for making deep sub-micron mosfet structures having improved electrical characteristicsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 26, 2000·74 cites·28 claims
- 0786US6724036B1Stacked-gate flash memory cell with folding gate and increased coupling ratioTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 20, 2004·40 cites·4 claims
- 0885US6153494AMethod to increase the coupling ratio of word line to floating gate by lateral coupling in stacked-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 28, 2000·70 cites·28 claims
- 0981US6172395B1Method of manufacture of self-aligned floating gate, flash memory cell and device manufactured therebyTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 9, 2001·37 cites·10 claims
- 1080US6261905B1Flash memory structure with stacking gate formed using damascene-like structureTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 17, 2001·26 cites·22 claims
- 1176US6297098B1Tilt-angle ion implant to improve junction breakdown in flash memory applicationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 2, 2001·38 cites·14 claims
- 1276US6127226AMethod for forming vertical channel flash memory cell using P/N junction isolationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 3, 2000·34 cites·32 claims
- 1375US6130168AUsing ONO as hard mask to reduce STI oxide loss on low voltage device in flash or EPROM processTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 10, 2000·47 cites·20 claims
- 1475US6011288AFlash memory cell with vertical channels, and source/drain bus linesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 4, 2000·33 cites·1 claims
- 1575US6001687AProcess for forming self-aligned source in flash cell using SiN spacer as hard maskTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 14, 1999·31 cites·17 claims
- 1673US6437397B1Flash memory cell with vertically oriented channelTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 20, 2002·26 cites·25 claims
- 1773US6078076AVertical channels in split-gate flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 20, 2000·30 cites·20 claims
- 1869US6348382B1Integration process to increase high voltage breakdown performanceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 19, 2002·29 cites·20 claims
- 1966US6251744B1Implant method to improve characteristics of high voltage isolation and high voltage breakdownTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 26, 2001·32 cites·24 claims
- 2066US5960284AMethod for forming vertical channel flash memory cell and device manufactured therebyTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Sep 28, 1999·19 cites·20 claims
- 2164US5970341AMethod for forming vertical channels in split-gate flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 19, 1999·20 cites·11 claims
- 2250US6066874AFlash memory cell with vertical channels, and source/drain bus linesTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 23, 2000·10 cites·25 claims
- 2340US2003166324A1Tilt-angle ion implant to improve junction breakdown in flash memory applicationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Application pending·0 cites
- 2440US2002019103A1Tilt-angle ion implant to improve junction breakdown in flash memory applicationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Application pending·0 cites
- 2537US6495880B2Method to fabricate a flash memory cell with a planar stacked gateTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 17, 2002·0 cites·12 claims
- 2635US6190969B1Method to fabricate a flash memory cell with a planar stacked gateTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 20, 2001·3 cites·19 claims
- 2732US6063664AMethod of making EEPROM with trenched structureTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted May 16, 2000·2 cites·13 claims
- 2830US2003107651A1DIY photo print deviceFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →