Inventor · disambiguated record
Joo Won Choi
Also filed as: CHOI JOO WON
15 granted patents·3 pending applications·69 citations·filing 2008–2021
90Inventor score
Top patents by PatentIndex Score
18 records- 0190US9263255B2Method for separating epitaxial layers from growth substrates, and semiconductor device using sameSEOUL VIOSYS CO LTD·Filed 2013·Granted Feb 16, 2016·11 cites·30 claims
- 0290US7638414B2Method of forming nitride semiconductor layer on patterned substrate and light emitting diode having the sameSEOUL OPTO DEVICE CO LTD·Filed 2008·Granted Dec 29, 2009·17 cites·12 claims
- 0389US9466761B2Light emitting diode having well and/or barrier layers with superlattice structureCHOI JOO WON·Filed 2008·Granted Oct 11, 2016·21 cites·3 claims
- 0489US9224917B2Light emitting diode having photonic crystal structure and method of fabricating the sameSEO WON CHEOL·Filed 2012·Granted Dec 29, 2015·7 cites·9 claims
- 0588US9111840B2Semiconductor device and method of fabricating the sameSEOUL VIOSYS CO LTD·Filed 2013·Granted Aug 18, 2015·5 cites·18 claims
- 0684US9514926B2Substrate recycling methodSEOUL VIOSYS CO LTD·Filed 2015·Granted Dec 6, 2016·4 cites·20 claims
- 0777US9048086B2Substrate recycling methodSEOUL VIOSYS CO LTD·Filed 2014·Granted Jun 2, 2015·3 cites·19 claims
- 0861US9041032B2Light emitting diode having strain-enhanced well layerCHOI JOO WON·Filed 2012·Granted May 26, 2015·1 cites·19 claims
- 0959US10665752B2Air void structures for semiconductor fabricationSAPHLUX INC·Filed 2017·Granted May 26, 2020·0 cites·19 claims
- 1051US9882085B2Method for separating epitaxial layers from growth substrates, and semiconductor device using sameSEOUL VIOSYS CO LTD·Filed 2016·Granted Jan 30, 2018·0 cites·17 claims
- 1151US9537045B2Semiconductor device and method of fabricating the sameSEOUL VIOSYS CO LTD·Filed 2015·Granted Jan 3, 2017·0 cites·14 claims
- 1247US11488844B2First cleaning apparatus, cleaning equipment including the same, and cleaning methodSK SILTRON CO LTD·Filed 2021·Granted Nov 1, 2022·0 cites·10 claims
- 1347US10672948B2Methods for producing light extraction structures for semiconductor devicesSAPHLUX INC·Filed 2017·Granted Jun 2, 2020·0 cites·11 claims
- 1447US2020194619A1Semiconductor devices with superlattice layersSAPHLUX INC·Filed 2019·Application pending·0 cites
- 1547US2016380149A1Light emitting diode having well and/or barrier layers with superlattice structureSEOUL VIOSYS CO LTD·Filed 2016·Application pending·0 cites
- 1645US2013026531A1Non-polar light emitting diode having photonic crystal structure and method of fabricating the sameSEOUL OPTO DEVICE CO LTD·Filed 2012·Application pending·0 cites
- 1744US9450141B2Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methodsSEOUL VIOSYS CO LTD·Filed 2013·Granted Sep 20, 2016·0 cites·15 claims
- 1843US9373496B2Substrate recycling method and recycled substrateSEOUL VIOSYS CO LTD·Filed 2013·Granted Jun 21, 2016·0 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →