Inventor · disambiguated record
John E. Davey
Also filed as: CHRISTOU ARISTOS · DAVEY JOHN E
10 granted patents·204 citations·filing 1975–1989
91Inventor score
Top patents by PatentIndex Score
10 records- 0190US4188710AOhmic contacts for group III-V n-type semiconductors using epitaxial germanium filmsUS NAVY·Filed 1978·Granted Feb 19, 1980·47 cites·14 claims
- 0287US4330343ARefractory passivated ion-implanted GaAs ohmic contactsUS NAVY·Filed 1980·Granted May 18, 1982·47 cites·11 claims
- 0372US4263605AIon-implanted, improved ohmic contacts for GaAs semiconductor devicesUS NAVY·Filed 1979·Granted Apr 21, 1981·17 cites·6 claims
- 0466US4316201ALow-barrier-height epitaxial Ge-GaAs mixer diodeUS NAVY·Filed 1980·Granted Feb 16, 1982·20 cites·14 claims
- 0560US4226649AMethod for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniquesUS NAVY·Filed 1979·Granted Oct 7, 1980·20 cites·18 claims
- 0653US4927782AMethod of making self-aligned GaAs/AlGaAs FET'sUS NAVY·Filed 1989·Granted May 22, 1990·15 cites·12 claims
- 0751US4298403AIon-implanted evaporated germanium layers as n+ contacts to GaAsDAVEY JOHN E·Filed 1980·Granted Nov 3, 1981·13 cites·11 claims
- 0849US4267014ASemiconductor encapsulant for annealing ion-implanted GaAsUS NAVY·Filed 1980·Granted May 12, 1981·15 cites·11 claims
- 0942US4888626ASelf-aligned gaas fet with low 1/f noiseUS NAVY·Filed 1987·Granted Dec 19, 1989·9 cites·6 claims
- 1024US3962485AMethod for forming uniform stress-free thin filmsUS NAVY·Filed 1975·Granted Jun 8, 1976·1 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →