Inventor · disambiguated record

John L. Deines

Also filed as: DEINES JOHN L

2 granted patents·90 citations·filing 1976–1977

66Inventor score

Technology areasG01R H10W

Files withIBM2

Top patents by PatentIndex Score

2 records

0189US4028149AProcess for forming monocrystalline silicon carbide on silicon substratesIBM·Filed 1976·Granted Jun 7, 1977·75 cites·12 claims
0262US4180439AAnodic etching method for the detection of electrically active defects in siliconIBM·Filed 1977·Granted Dec 25, 1979·15 cites·4 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →