Inventor · disambiguated record
John Edmond
Also filed as: EDMOND JOHN · EDMOND JOHN A · EDMOND JOHN ADAM
181 granted patents·10 pending applications·14,094 citations·filing 1987–2024
99Inventor score
Top patents by PatentIndex Score
191 records- 0199US7910945B2Nickel tin bonding system with barrier layer for semiconductor wafers and devicesCREE INC·Filed 2007·Granted Mar 22, 2011·209 cites·20 claims
- 0299US7795623B2Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structuresCREE INC·Filed 2007·Granted Sep 14, 2010·92 cites·47 claims
- 0399US7791061B2External extraction light emitting diode based upon crystallographic faceted surfacesCREE INC·Filed 2006·Granted Sep 7, 2010·166 cites·42 claims
- 0499US7211833B2Light emitting diodes including barrier layers/sublayersCREE INC·Filed 2005·Granted May 1, 2007·152 cites·24 claims
- 0599US6120600ADouble heterojunction light emitting diode with gallium nitride active layerCREE INC·Filed 1998·Granted Sep 19, 2000·589 cites·7 claims
- 0699US5739554ADouble heterojunction light emitting diode with gallium nitride active layerCREE RESEARCH INC·Filed 1995·Granted Apr 14, 1998·848 cites·42 claims
- 0799US5416342ABlue light-emitting diode with high external quantum efficiencyCREE RESEARCH INC·Filed 1993·Granted May 16, 1995·533 cites·53 claims
- 0899US5027168ABlue light emitting diode formed in silicon carbideCREE RESEARCH INC·Filed 1989·Granted Jun 25, 1991·588 cites·65 claims
- 0999US4966862AMethod of production of light emitting diodesCREE RESEARCH INC·Filed 1989·Granted Oct 30, 1990·644 cites·16 claims
- 1099US4946547AMethod of preparing silicon carbide surfaces for crystal growthCREE RESEARCH INC·Filed 1989·Granted Aug 7, 1990·750 cites·25 claims
- 1199US4918497ABlue light emitting diode formed in silicon carbideCREE RESEARCH INC·Filed 1988·Granted Apr 17, 1990·717 cites·64 claims
- 1298US11901181B2Carrier-assisted method for parting crystalline material along laser damage regionWOLFSPEED INC·Filed 2021·Granted Feb 13, 2024·7 cites·27 claims
- 1398US9395051B2Gas cooled LED lampHUSSELL CHRISTOPHER P·Filed 2012·Granted Jul 19, 2016·62 cites·31 claims
- 1498US9322543B2Gas cooled LED lamp with heat conductive submountHUSSELL CHRISTOPHER P·Filed 2012·Granted Apr 26, 2016·70 cites·27 claims
- 1598US7737459B2High output group III nitride light emitting diodesCREE INC·Filed 2005·Granted Jun 15, 2010·65 cites·31 claims
- 1698US6582986B2Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structuresCREE INC·Filed 2001·Granted Jun 24, 2003·164 cites·15 claims
- 1798US6201262B1Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structureCREE INC·Filed 1997·Granted Mar 13, 2001·604 cites·16 claims
- 1898US6187606B1Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structureCREE INC·Filed 1999·Granted Feb 13, 2001·484 cites·10 claims
- 1998US5604135AMethod of forming green light emitting diode in silicon carbideCREE RESEARCH INC·Filed 1994·Granted Feb 18, 1997·417 cites·17 claims
- 2098US5523589AVertical geometry light emitting diode with group III nitride active layer and extended lifetimeCREE RESEARCH INC·Filed 1994·Granted Jun 4, 1996·1.1k cites·36 claims
- 2198US5338944ABlue light-emitting diode with degenerate junction structureCREE RESEARCH INC·Filed 1993·Granted Aug 16, 1994·475 cites·47 claims
- 2297US11826846B2Laser-assisted method for parting crystalline materialWOLFSPEED INC·Filed 2020·Granted Nov 28, 2023·8 cites·23 claims
- 2397US8866169B2LED package with increased feature sizesEMERSON DAVID·Filed 2010·Granted Oct 21, 2014·48 cites·77 claims
- 2497US8591062B2LED lampCREE INC·Filed 2013·Granted Nov 26, 2013·47 cites·30 claims
- 2597US7462861B2LED bonding structures and methods of fabricating LED bonding structuresCREE INC·Filed 2005·Granted Dec 9, 2008·44 cites·14 claims
- 2697US6955977B2Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structuresCREE INC·Filed 2003·Granted Oct 18, 2005·84 cites·40 claims
- 2797US6812053B1Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structuresCREE INC·Filed 2000·Granted Nov 2, 2004·104 cites·29 claims
- 2897US5726463ASilicon carbide MOSFET having self-aligned gate structureGEN ELECTRIC·Filed 1992·Granted Mar 10, 1998·144 cites·5 claims
- 2997US5592501ALow-strain laser structures with group III nitride active layersCREE RESEARCH INC·Filed 1994·Granted Jan 7, 1997·281 cites·35 claims
- 3097US5393993ABuffer structure between silicon carbide and gallium nitride and resulting semiconductor devicesCREE RESEARCH INC·Filed 1993·Granted Feb 28, 1995·977 cites·27 claims
- 3196US12070875B2Silicon carbide wafers with relaxed positive bow and related methodsWOLFSPEED INC·Filed 2023·Granted Aug 27, 2024·5 cites·18 claims
- 3296US11911842B2Laser-assisted method for parting crystalline materialWOLFSPEED INC·Filed 2022·Granted Feb 27, 2024·7 cites·12 claims
- 3396US11654596B2Silicon carbide wafers with relaxed positive bow and related methodsWOLFSPEED INC·Filed 2021·Granted May 23, 2023·10 cites·24 claims
- 3496US11219966B1Laser-assisted method for parting crystalline materialWOLFSPEED INC·Filed 2020·Granted Jan 11, 2022·19 cites·28 claims
- 3596US11034056B2Silicon carbide wafers with relaxed positive bow and related methodsCREE INC·Filed 2020·Granted Jun 15, 2021·7 cites·31 claims
- 3696US10611052B1Silicon carbide wafers with relaxed positive bow and related methodsCREE INC·Filed 2019·Granted Apr 7, 2020·39 cites·30 claims
- 3796US10576585B1Laser-assisted method for parting crystalline materialCREE INC·Filed 2019·Granted Mar 3, 2020·49 cites·30 claims
- 3896US10562130B1Laser-assisted method for parting crystalline materialCREE INC·Filed 2019·Granted Feb 18, 2020·39 cites·18 claims
- 3996US10312224B2High density pixelated LED and devices and methods thereofCREE INC·Filed 2017·Granted Jun 4, 2019·11 cites·28 claims
- 4096US10260683B2Solid-state lamp with LED filaments having different CCT'sCREE INC·Filed 2017·Granted Apr 16, 2019·24 cites·21 claims
- 4196US9159888B2Wafer level phosphor coating method and devices fabricated utilizing methodCHITNIS ASHAY·Filed 2007·Granted Oct 13, 2015·60 cites·58 claims
- 4296US8525190B2Conformal gel layers for light emitting diodesDONOFRIO MATTHEW·Filed 2011·Granted Sep 3, 2013·22 cites·24 claims
- 4396US8076670B2LED with conductively joined bonding structureSLATER JR DAVID BEARDSLEY·Filed 2009·Granted Dec 13, 2011·53 cites·18 claims
- 4496US7611915B2Methods of manufacturing light emitting diodes including barrier layers/sublayersCREE INC·Filed 2007·Granted Nov 3, 2009·31 cites·13 claims
- 4596US6906352B2Group III nitride LED with undoped cladding layer and multiple quantum wellCREE INC·Filed 2002·Granted Jun 14, 2005·168 cites·39 claims
- 4696US5539217ASilicon carbide thyristorCREE RESEARCH INC·Filed 1993·Granted Jul 23, 1996·147 cites·18 claims
- 4796US4945394ABipolar junction transistor on silicon carbideUNIV NORTH CAROLINA STATE·Filed 1987·Granted Jul 31, 1990·124 cites·6 claims
- 4895US11024501B2Carrier-assisted method for parting crystalline material along laser damage regionCREE INC·Filed 2019·Granted Jun 1, 2021·11 cites·30 claims
- 4995US8752983B2Gas cooled LED lampCREE INC·Filed 2013·Granted Jun 17, 2014·22 cites·27 claims
- 5095US8686429B2LED structure with enhanced mirror reflectivityBERGMANN MICHAEL·Filed 2011·Granted Apr 1, 2014·25 cites·30 claims
Showing the top 50 of 191 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →