Inventor · disambiguated record
John M. Grant
Also filed as: GRANT JOHN M · GRANT JOHN MARTIN
13 granted patents·629 citations·filing 1994–2011
94Inventor score
Top patents by PatentIndex Score
13 records- 0198US7015517B2Semiconductor device incorporating a defect controlled strained channel structure and method of making the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 21, 2006·92 cites·10 claims
- 0295US6919258B2Semiconductor device incorporating a defect controlled strained channel structure and method of making the sameFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jul 19, 2005·104 cites·10 claims
- 0395US6423619B1Transistor metal gate structure that minimizes non-planarity effects and method of formationMOTOROLA INC·Filed 2001·Granted Jul 23, 2002·154 cites·20 claims
- 0494US8076189B2Method of forming a semiconductor device and semiconductor deviceGRANT JOHN M·Filed 2006·Granted Dec 13, 2011·53 cites·13 claims
- 0594US6831350B1Semiconductor structure with different lattice constant materials and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Dec 14, 2004·89 cites·21 claims
- 0685US8445939B2Method of forming a semiconductor device and semiconductor deviceGRANT JOHN M·Filed 2011·Granted May 21, 2013·8 cites·20 claims
- 0783US6908822B2Semiconductor device having an insulating layer and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jun 21, 2005·35 cites·28 claims
- 0878US5736002AMethods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of sameSHARP MICROELECT TECH INC·Filed 1994·Granted Apr 7, 1998·72 cites·2 claims
- 0971US7790528B2Dual substrate orientation or bulk on SOI integrations using oxidation for silicon epitaxy spacer formationFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Sep 7, 2010·5 cites·21 claims
- 1069US8039339B2Separate layer formation in a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 18, 2011·4 cites·25 claims
- 1156US6551922B1Method for making a semiconductor device by variable chemical mechanical polish downforceMOTOROLA INC·Filed 2002·Granted Apr 22, 2003·7 cites·20 claims
- 1252US6891229B2Inverted isolation formed with spacersFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted May 10, 2005·6 cites·20 claims
- 1345US7879663B2Trench formation in a semiconductor materialFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Feb 1, 2011·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →