Inventor · disambiguated record
Joerg Haberecht
Also filed as: HABERECHT JOERG
8 granted patents·1 pending application·15 citations·filing 2010–2022
78Inventor score
Top patents by PatentIndex Score
9 records- 0182US8372298B2Method for producing epitaxially coated silicon wafersSILTRONIC AG·Filed 2010·Granted Feb 12, 2013·9 cites·17 claims
- 0277US10865499B2Susceptor for holding a semiconductor wafer, method for depositing an epitaxial layer on a front side of a semiconductor wafer, and semiconductor wafer with epitaxial layerSILTRONIC AG·Filed 2017·Granted Dec 15, 2020·3 cites·12 claims
- 0369US8709156B2Methods for producing epitaxially coated silicon wafersHABERECHT JOERG·Filed 2010·Granted Apr 29, 2014·1 cites·21 claims
- 0463US8268708B2Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafersHABERECHT JOERG·Filed 2010·Granted Sep 18, 2012·2 cites·19 claims
- 0551US2024200226A1Process for manufacturing semiconductor wafers containing a gas-phase epitaxial layer in a deposition chamberSILTRONIC AG·Filed 2022·Application pending·0 cites
- 0649US11982015B2Method for depositing an epitaxial layer on a front side of a semiconductor wafer, and device for carrying out the methodSILTRONIC AG·Filed 2020·Granted May 14, 2024·0 cites·10 claims
- 0744US11578424B2Epitaxially coated semiconductor wafer of monocrystalline silicon and method for production thereofSILTRONIC AG·Filed 2018·Granted Feb 14, 2023·0 cites·3 claims
- 0843US11538683B2Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the methodSILTRONIC AG·Filed 2018·Granted Dec 27, 2022·0 cites·5 claims
- 0938US10982324B2Method and device for producing coated semiconductor wafersSILTRONIC AG·Filed 2017·Granted Apr 20, 2021·0 cites·4 claims
Join the waitlist — get patent alerts
Get an alert when Joerg Haberecht files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →