Inventor · disambiguated record
Joel Hartmann
Also filed as: HARTMANN JOEL
12 granted patents·523 citations·filing 1984–2004
93Inventor score
Top patents by PatentIndex Score
12 records- 0194US5696718ADevice having an electrically erasable non-volatile memory and process for producing such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1995·Granted Dec 9, 1997·146 cites·6 claims
- 0293US4636281AProcess for the autopositioning of a local field oxide with respect to an insulating trenchCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1985·Granted Jan 13, 1987·158 cites·17 claims
- 0378US4624864AProcess for the autopositioning of an interconnection line on an electric contact hole of an integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1985·Granted Nov 25, 1986·53 cites·8 claims
- 0475US5679970ATriple gate flash-type EEPROM memory and its production processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1993·Granted Oct 21, 1997·37 cites·13 claims
- 0573US5256584AMethod for producing a non-volatile memory cell using spacersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1992·Granted Oct 26, 1993·38 cites·10 claims
- 0668US5246882AMethod for embodying an electric circuit on an active element of an mis integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1991·Granted Sep 21, 1993·41 cites·7 claims
- 0747US5336628AMethod for fabricating semiconductor memory deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1993·Granted Aug 9, 1994·17 cites·8 claims
- 0845US4682403AMethod for interconnecting the active zones and gates of CMOS integrated circuitsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1985·Granted Jul 28, 1987·13 cites·7 claims
- 0940US4672313ADevice for checking mobile electrical charges in a MOS integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1984·Granted Jun 9, 1987·6 cites·5 claims
- 1039US6696723B2Electrically erasable, programmable, non-volatile memory device compatible with a CMOS/SOI production processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Feb 24, 2004·6 cites·13 claims
- 1138US4632725AMethod for interconnecting the active zones and/or the gates of a C/MOS integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1985·Granted Dec 30, 1986·8 cites·16 claims
- 1237US7297578B2Method for producing a field effect transistorST MICROELECTRONICS SA·Filed 2004·Granted Nov 20, 2007·0 cites·36 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →