Inventor · disambiguated record
Joachim Hoepfner
Also filed as: HOEPFNER JOACHIM
16 granted patents·1 pending application·486 citations·filing 1976–2001
95Inventor score
Top patents by PatentIndex Score
17 records- 0193US6018174ABottle-shaped trench capacitor with epi buried layerSIEMENS AG·Filed 1998·Granted Jan 25, 2000·114 cites·10 claims
- 0290US5945704ATrench capacitor with epi buried layerSIEMENS AG·Filed 1998·Granted Aug 31, 1999·86 cites·10 claims
- 0386US6465370B1Low leakage, low capacitance isolation materialINFINEON TECHNOLOGIES AG·Filed 1998·Granted Oct 15, 2002·79 cites·16 claims
- 0479US6008103AMethod for forming trench capacitors in an integrated circuitSIEMENS AG·Filed 1998·Granted Dec 28, 1999·45 cites·26 claims
- 0577US4092210AProcess for the production of etched structures in a surface of a solid body by ionic etchingSIEMENS AG·Filed 1976·Granted May 30, 1978·31 cites·22 claims
- 0670US6265279B1Method for fabricating a trench capacitorINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jul 24, 2001·29 cites·23 claims
- 0766US6475859B1Plasma doping for DRAM with deep trenches and hemispherical grainsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 5, 2002·10 cites·7 claims
- 0863US6313495B1Stack capacitor with improved plug conductivitySIEMENS AG·Filed 2000·Granted Nov 6, 2001·9 cites·13 claims
- 0963US5057668ADevice for the implementation of a curing process at a semiconductor wafer and method for curing a semiconductor waferSIEMENS AG·Filed 1988·Granted Oct 15, 1991·16 cites·20 claims
- 1056US6790676B2Method for producing a ferroelectric layerINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 14, 2004·7 cites·17 claims
- 1155US6046059AMethod of forming stack capacitor with improved plug conductivitySIEMENS AG·Filed 1998·Granted Apr 4, 2000·13 cites·15 claims
- 1253US5093272AManufacturing method for a self-aligned emitter-base-complex for heterobipolar transistorsSIEMENS AG·Filed 1990·Granted Mar 3, 1992·16 cites·12 claims
- 1346US6645855B2Method for fabricating an integrated semiconductor productINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 11, 2003·2 cites·23 claims
- 1442US6068928AMethod for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the methodSIEMENS AG·Filed 1998·Granted May 30, 2000·8 cites·10 claims
- 1541US5340755AMethod of making planar heterobipolar transistor having trenched isolation of the collector terminalSIEMENS AKTIEGENSELLSCHAFT·Filed 1992·Granted Aug 23, 1994·12 cites·12 claims
- 1640US6329703B1Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contactINFINEON TECHNOLOGIES AG·Filed 1998·Granted Dec 11, 2001·9 cites·11 claims
- 1737US2002025622A1Low leakage capacitance isolation materialFiled 2000·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Joachim Hoepfner files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →