Inventor · disambiguated record
John D. Holder
Also filed as: HOLDER JOHN · HOLDER JOHN D · HOLDER JOHN DAVID · HOLDER JOHN DAVIS
29 granted patents·7 pending applications·635 citations·filing 1978–2019
97Inventor score
Files withMEMC ELECTRONIC MATERIALS30CORNER STAR LTD1MEMC ELECTRICAL MATERIALS INC1SUNEDISON INC1US ENERGY1
Top patents by PatentIndex Score
36 records- 0192US5976247ASurface-treated crucibles for improved zero dislocation performanceMEMC ELECTRONIC MATERIALS·Filed 1995·Granted Nov 2, 1999·130 cites·80 claims
- 0289US7344594B2Melter assembly and method for charging a crystal forming apparatus with molten source materialMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Mar 18, 2008·7 cites·30 claims
- 0387US6454851B1Method for preparing molten silicon melt from polycrystalline silicon chargeMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Sep 24, 2002·29 cites·7 claims
- 0486US5980629AMethods for improving zero dislocation yield of single crystalsMEMC ELECTRONIC MATERIALS·Filed 1995·Granted Nov 9, 1999·67 cites·57 claims
- 0585US5919303AProcess for preparing a silicon melt from a polysilicon chargeMEMC ELECTRONIC MATERIALS·Filed 1997·Granted Jul 6, 1999·50 cites·21 claims
- 0685US5588993AMethod for preparing molten silicon melt from polycrystalline silicon chargeMEMC ELECTRONIC MATERIALS·Filed 1995·Granted Dec 31, 1996·52 cites·40 claims
- 0781US6461427B2Barium doping of molten silicon for use in crystal growing processMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Oct 8, 2002·18 cites·14 claims
- 0880US7465351B2Melter assembly and method for charging a crystal forming apparatus with molten source materialMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Dec 16, 2008·3 cites·15 claims
- 0979US6319313B1Barium doping of molten silicon for use in crystal growing processMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Nov 20, 2001·18 cites·19 claims
- 1078US5913975ACrucible and method of preparation thereofMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jun 22, 1999·25 cites·7 claims
- 1178US5795381ASIO probe for real-time monitoring and control of oxygen during czochralski growth of single crystal siliconMEMC ELECTRICAL MATERIALS INC·Filed 1996·Granted Aug 18, 1998·53 cites·30 claims
- 1272US6350312B1Strontium doping of molten silicon for use in crystal growing processMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Feb 26, 2002·17 cites·37 claims
- 1371US6315828B1Continuous oxidation process for crystal pulling apparatusMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Nov 13, 2001·13 cites·23 claims
- 1470US5288366AMethod for growing multiple single crystals and apparatus for use thereinMEMC ELECTRONIC MATERIALS·Filed 1992·Granted Feb 22, 1994·17 cites·8 claims
- 1569US6344083B1Process for producing a silicon meltMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Feb 5, 2002·6 cites·12 claims
- 1669US6284040B1Process of stacking and melting polycrystalline silicon for high quality single crystal productionMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Sep 4, 2001·22 cites·16 claims
- 1768US2019153615A1Crystal pulling method including crucible and conditioning membersCORNER STAR LTD·Filed 2019·Application pending·0 cites
- 1866US10221500B2System for forming an ingot including crucible and conditioning membersSUNEDISON INC·Filed 2017·Granted Mar 5, 2019·0 cites·11 claims
- 1965US4231796AInternal zone growth method for producing metal oxide metal eutectic compositesUS ENERGY·Filed 1978·Granted Nov 4, 1980·17 cites·8 claims
- 2064US7497907B2Partially devitrified crucibleMEMC ELECTRONIC MATERIALS·Filed 2004·Granted Mar 3, 2009·5 cites·14 claims
- 2162US6652645B2Process for preparing a silicon meltMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Nov 25, 2003·7 cites·23 claims
- 2261US7691199B2Melter assembly and method for charging a crystal forming apparatus with molten source materialMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Apr 6, 2010·2 cites·28 claims
- 2359US5373807AApparatus for growing multiple single crystalsMEMC ELECTRONIC MATERIALS·Filed 1993·Granted Dec 20, 1994·11 cites·13 claims
- 2458US7291222B2Systems and methods for measuring and reducing dust in granular materialMEMC ELECTRONIC MATERIALS·Filed 2004·Granted Nov 6, 2007·4 cites·33 claims
- 2558US6749683B2Process for producing a silicon meltMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jun 15, 2004·3 cites·30 claims
- 2658US5904768AProcess for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenicMEMC ELECTRONIC MATERIALS·Filed 1996·Granted May 18, 1999·19 cites·32 claims
- 2756US6039801AContinuous oxidation process for crystal pulling apparatusMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Mar 21, 2000·14 cites·26 claims
- 2844US2007074653A1Apparatus for preparation of silicon crystals with reduced metal contentMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 2943US6183553B1Process and apparatus for preparation of silicon crystals with reduced metal contentMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Feb 6, 2001·10 cites·28 claims
- 3042US6589332B1Method and system for measuring polycrystalline chunk size and distribution in the charge of a Czochralski processMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Jul 8, 2003·8 cites·12 claims
- 3142US6214109B1Apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenicMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Apr 10, 2001·8 cites·24 claims
- 3240US2003024467A1Method of eliminating near-surface bubbles in quartz cruciblesMEMC ELECTRONIC MATERIALS·Filed 2002·Application pending·0 cites
- 3338US2002144642A1Apparatus and process for the preparation of low-iron single crystal silicon substantially free of agglomerated intrinsic point defectsFiled 2001·Application pending·0 cites
- 3438US2003101924A1Intermittent feeding technique for increasing the melting rate of polycrystalline siliconMEMC ELECTRONIC MATERIALS·Filed 2001·Application pending·0 cites
- 3534US2002124792A1Crystal puller and method for growing single crystal semiconductor materialFiled 2001·Application pending·0 cites
- 3633US2002112658A1Process for monitoring the gaseous environment of a crystal puller for semiconductor growthMEMC ELECTRONIC MATERIALS·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →