Inventor · disambiguated record
Jodi Mari Iwata
Also filed as: IWATA JODI · IWATA Jodi Mari
27 granted patents·4 pending applications·107 citations·filing 2015–2025
95Inventor score
Top patents by PatentIndex Score
31 records- 0198US11417835B2Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·5 cites·20 claims
- 0298US10014465B1Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyHEADWAY TECH INC·Filed 2017·Granted Jul 3, 2018·22 cites·13 claims
- 0398US9966529B1MgO insertion into free layer for magnetic memory applicationsHEADWAY TECH INC·Filed 2017·Granted May 8, 2018·19 cites·13 claims
- 0497US10957851B2Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·6 cites·20 claims
- 0597US10522752B1Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·10 cites·22 claims
- 0696US10665773B2Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·7 cites·20 claims
- 0796US10193062B2MgO insertion into free layer for magnetic memory applicationsHEADWAY TECH INC·Filed 2018·Granted Jan 29, 2019·7 cites·37 claims
- 0894US10658577B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·3 cites·20 claims
- 0993US10439132B2Protective passivation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 8, 2019·6 cites·20 claims
- 1092US10950782B2Nitride diffusion barrier structure for spintronic applicationsHEADWAY TECH INC·Filed 2019·Granted Mar 16, 2021·4 cites·17 claims
- 1191US2024381779A1Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment EnhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1288US11264560B2Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applicationsHEADWAY TECH INC·Filed 2019·Granted Mar 1, 2022·3 cites·17 claims
- 1387US10522744B2High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·4 cites·19 claims
- 1487US10115892B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2017·Granted Oct 30, 2018·2 cites·7 claims
- 1586US12213385B2Protective passivation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 1685US10431736B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 1, 2019·1 cites·20 claims
- 1779US12167699B2Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
- 1879US11849646B2Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 1979US2025169372A1Protective passivation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2078US10347281B2Structures and methods for templated growth of high areal density heat assisted magnetic recording mediaHGST Netherlands BV·Filed 2015·Granted Jul 9, 2019·5 cites·21 claims
- 2178US2025338775A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2277US11758820B2Protective passivation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
- 2377US11264566B2Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratioHEADWAY TECH INC·Filed 2019·Granted Mar 1, 2022·1 cites·14 claims
- 2476US11569441B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
- 2571US10784310B2Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devicesHEADWAY TECH INC·Filed 2018·Granted Sep 22, 2020·2 cites·41 claims
- 2670US12356865B2Multilayer structure for reducing film roughness in magnetic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 8, 2025·0 cites·20 claims
- 2768US11024798B2Protective passivation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·0 cites·20 claims
- 2867US11683994B2Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratioHEADWAY TECH INC·Filed 2022·Granted Jun 20, 2023·0 cites·17 claims
- 2967US2019088866A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesHEADWAY TECH INC·Filed 2018·Application pending·0 cites
- 3057US11956971B2Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·20 claims
- 3152US11316098B2High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →